SISS05DN-T1-GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PowerPAK-1212-8

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

108 A

Rds On - Drain-Source Resistance:

5.8 mOhms

Vgs th - Gate-Source Threshold Voltage:

1 V

Vgs - Gate-Source Voltage:

- 20 V, + 16 V

Qg - Gate Charge:

76 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

65.7 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

TrenchFET

Packaging:

Reel

Transistor Type:

1 P-Channel

Brand:

Vishay / Siliconix

Fall Time:

13 ns

Product Type:

MOSFET

Rise Time:

15 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

47 ns

Typical Turn-On Delay Time:

16 ns

Tags

SISS0, SISS, SIS