IRF7807VD2PBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SO-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

8.3 A

Rds On - Drain-Source Resistance:

25 mOhms

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

9.5 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.5 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

1.75 mm

Length:

4.9 mm

Transistor Type:

1 N-Channel

Type:

FETKY MOSFET & Schottky Diode

Width:

3.9 mm

Brand:

Infineon / IR

Fall Time:

2.2 ns

Product Type:

MOSFET

Rise Time:

1.2 ns

Factory Pack Quantity:

95

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

11 ns

Typical Turn-On Delay Time:

6.3 ns

Part # Aliases:

SP001575258

Unit Weight:

0.019048 oz

Tags

IRF7807VD2, IRF7807VD, IRF7807V, IRF7807, IRF780, IRF78, IRF7, IRF