IRF7807V

IRF7807VD1PBF vs IRF7807VD1TRPBF. vs IRF7807V

 
PartNumberIRF7807VD1PBFIRF7807VD1TRPBF.IRF7807V
DescriptionMOSFET FETKY 30V VBRDSS 25mOhms 9.5nC
ManufacturerInfineon-IR
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current8.3 A--
Rds On Drain Source Resistance25 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge9.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height1.75 mm--
Length4.9 mm--
Transistor Type1 N-Channel--
TypeFETKY MOSFET & Schottky Diode--
Width3.9 mm--
BrandInfineon / IR--
Fall Time2.2 ns--
Product TypeMOSFET--
Rise Time1.2 ns--
Factory Pack Quantity95--
SubcategoryMOSFETs--
Typical Turn Off Delay Time11 ns--
Typical Turn On Delay Time6.3 ns--
Part # AliasesSP001551528--
Unit Weight0.019048 oz--
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRF7807VTRPBF MOSFET MOSFT 30V 8.3A 25mOhm 9.5nC
IRF7807VD2PBF MOSFET 30V FETKY 30 VBRD 25mOhms 9.5nC
IRF7807VD1PBF MOSFET FETKY 30V VBRDSS 25mOhms 9.5nC
IRF7807VD1TRPBF. New and Original
IRF7807VD2TRPBF. New and Original
IRF7807V New and Original
IRF7807VPBF-1 New and Original
Infineon Technologies
Infineon Technologies
IRF7807VD1PBF MOSFET N-CH 30V 8.3A 8-SOIC
IRF7807VD2 MOSFET N-CH 30V 8.3A 8-SOIC
IRF7807VD2PBF MOSFET N-CH 30V 8.3A 8-SOIC
IRF7807VD2TR MOSFET N-CH 30V 8.3A 8-SOIC
IRF7807VD1 MOSFET N-CH 30V 8.3A 8-SOIC
IRF7807VD1TR MOSFET N-CH 30V 8.3A 8-SOIC
IRF7807VD1TRPBF MOSFET N-CH 30V 8.3A 8-SOIC
IRF7807VPBF MOSFET N-CH 30V 8.3A 8-SOIC
IRF7807VTR MOSFET N-CH 30V 8.3A 8-SOIC
IRF7807VTRPBF MOSFET N-CH 30V 8.3A 8-SOIC
IRF7807VD2TRPBF IGBT Transistors MOSFET MOSFT w/Schttky 30V 8.3A 25mOhm 9.5nC
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