FQI7N80TU

FQI7N80TU
Mfr. #:
FQI7N80TU
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors MOSFET 800V N-Channel QFET
Lifecycle:
New from this manufacturer.
Datasheet:
FQI7N80TU Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
FSC
Product Category
FETs - Single
Packaging
Tube
Part-Aliases
FQI7N80TU_NL
Unit-Weight
0.073511 oz
Mounting-Style
Through Hole
Package-Case
I2PAK-3
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
3.13 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
55 ns
Rise-Time
80 ns
Vgs-Gate-Source-Voltage
30 V
Id-Continuous-Drain-Current
6.6 A
Vds-Drain-Source-Breakdown-Voltage
800 V
Rds-On-Drain-Source-Resistance
1.5 Ohms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
95 ns
Typical-Turn-On-Delay-Time
35 ns
Forward-Transconductance-Min
5 S
Channel-Mode
Enhancement
Tags
FQI7N, FQI7, FQI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Transistor,mosfet,n-Channel,800V V(Br)Dss,6.6A I(D),to-262Aa Rohs Compliant: Yes
***emi
N-Channel Power MOSFET, QFET®, 800 V, 6.6 A, 1.5 Ω, I2PAK
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Part # Mfg. Description Stock Price
FQI7N80TU
DISTI # V36:1790_06359039
ON Semiconductor800V N-CHANNEL QFET0
    FQI7N80TU
    DISTI # FQI7N80TU-ND
    ON SemiconductorMOSFET N-CH 800V 6.6A I2PAK
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube
    Temporarily Out of Stock
    • 1000:$1.2932
    FQI7N80TU
    DISTI # FQI7N80TU
    ON SemiconductorTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) I2PAK T/R (Alt: FQI7N80TU)
    RoHS: Compliant
    Min Qty: 1
    Container: Tape and Reel
    Europe - 0
    • 1000:€0.9279
    • 500:€0.9429
    • 100:€0.9569
    • 50:€0.9729
    • 25:€1.0709
    • 10:€1.2529
    • 1:€1.5319
    FQI7N80TU
    DISTI # FQI7N80TU
    ON SemiconductorTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) I2PAK T/R - Bulk (Alt: FQI7N80TU)
    RoHS: Compliant
    Min Qty: 264
    Container: Bulk
    Americas - 0
    • 2640:$1.0900
    • 264:$1.1900
    • 528:$1.1900
    • 792:$1.1900
    • 1320:$1.1900
    FQI7N80TU
    DISTI # FQI7N80TU
    ON SemiconductorTrans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) I2PAK T/R - Rail/Tube (Alt: FQI7N80TU)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube
    Americas - 0
    • 10000:$0.9169
    • 6000:$0.9399
    • 4000:$0.9519
    • 2000:$0.9639
    • 1000:$0.9709
    FQI7N80TU
    DISTI # 82C4196
    ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,6.6A I(D),TO-262AA ROHS COMPLIANT: YES0
    • 5000:$1.0600
    • 2500:$1.0900
    • 1000:$1.3500
    • 500:$1.5000
    • 100:$1.6300
    • 10:$2.0200
    • 1:$2.3800
    FQI7N80TU
    DISTI # 512-FQI7N80TU
    ON SemiconductorMOSFET 800V N-Channel QFET
    RoHS: Compliant
    0
    • 1:$2.3900
    • 10:$2.0300
    • 100:$1.6300
    • 500:$1.4200
    • 1000:$1.1800
    • 2000:$1.1000
    • 5000:$1.0600
    FQI7N80TUFairchild Semiconductor CorporationPower Field-Effect Transistor, 6.6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    RoHS: Compliant
    6588
    • 1000:$1.2500
    • 500:$1.3200
    • 100:$1.3700
    • 25:$1.4300
    • 1:$1.5400
    FQI7N80TUFairchild Semiconductor CorporationINSTOCK4750
      Image Part # Description
      FQI7N80TU

      Mfr.#: FQI7N80TU

      OMO.#: OMO-FQI7N80TU

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      OMO.#: OMO-FQI7N20L-1190

      New and Original
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      New and Original
      FQI7N80TU

      Mfr.#: FQI7N80TU

      OMO.#: OMO-FQI7N80TU-ON-SEMICONDUCTOR

      IGBT Transistors MOSFET 800V N-Channel QFET
      Availability
      Stock:
      Available
      On Order:
      1500
      Enter Quantity:
      Current price of FQI7N80TU is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $1.38
      $1.38
      10
      $1.31
      $13.07
      100
      $1.24
      $123.78
      500
      $1.17
      $584.50
      1000
      $1.10
      $1 100.30
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