BSS670S2LH6433XTMA1

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-23-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

55 V

Id - Continuous Drain Current:

540 mA

Rds On - Drain-Source Resistance:

650 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

2.26 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

360 mW

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

1.1 mm

Length:

2.9 mm

Transistor Type:

1 N-Channel

Width:

1.3 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

0.6 S

Fall Time:

24 ns

Product Type:

MOSFET

Rise Time:

25 ns

Factory Pack Quantity:

10000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

21 ns

Typical Turn-On Delay Time:

9 ns

Part # Aliases:

BSS670S2L H6433 SP001341854

Unit Weight:

0.000282 oz

Tags

BSS670S2LH, BSS670, BSS67, BSS6, BSS