IXFK30N100Q2

Mfr. #:: IXFK30N100Q2
メーカー:: Littelfuse
説明:: MOSFET N-CH 1000V 30A TO-264
ライフサイクル:: メーカー新製品
データシート:: IXFK30N100Q2 データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:

製品属性
属性値

メーカー: IXYS

製品カテゴリ: FET-シングル

シリーズ: IXFK30N100

包装: チューブ

単位重量: 0.352740 oz

取り付けスタイル: スルーホール

商標名: HyperFET

パッケージ-ケース: TO-264-3

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 735 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 10 ns

立ち上がり時間: 14 ns

Vgs-Gate-Source-Voltage: 30 V

Id-連続-ドレイン-電流: 30 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 1000 V

Rds-On-Drain-Source-Resistance: 400 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 60 ns

典型的なターンオン遅延時間: 22 ns

チャネルモード: 強化

Tags: IXFK30N, IXFK30, IXFK3, IXFK, IXF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXFK30N100Q2 説明

***ical: Trans MOSFET N-CH 1KV 30A 3-Pin(3+Tab) TO-264AA

***ark: Mosfet, N, To-264; Transistor Polarity:n Channel; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:30A; On Resistance Rds(On):0.4Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V Rohs Compliant: Yes

***ment14 APAC: MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:735W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-264; No. of Pins:3; Avalanche Single Pulse Energy Eas:4J; Current Id Max:30A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; N-channel Gate Charge:186nC; No. of Transistors:1; On State Resistance Max:400mohm; Package / Case:TO-264; Power Dissipation Pd:735W; Power Dissipation Pd:735W; Pulse Current Idm:120A; Rate of Voltage Change dv / dt:20V/ns; Repetitive Avalanche Energy Max:60mJ; Reverse Recovery Time trr Typ:250ns; Termination Type:Through Hole; Voltage Vds Typ:1kV; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Weight:0.00001kg

Market price

モデル	メーカー	説明	ストック	価格
IXFK30N100Q2 DISTI # IXFK30N100Q2-ND	IXYS Corporation	MOSFET N-CH 1000V 30A TO-264 RoHS: Compliant Min Qty: 25 Container: Tube	Temporarily Out of Stock	25:$31.7340
IXFK30N100Q2 DISTI # 747-IXFK30N100Q2	IXYS Corporation	MOSFET 30 Amps 1000V 0.35 Rds RoHS: Compliant	0

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