2N6517RLRPG

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

Through Hole

Package / Case:

TO-92-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

350 V

Collector- Base Voltage VCBO:

350 V

Emitter- Base Voltage VEBO:

6 V

Collector-Emitter Saturation Voltage:

1 V

Maximum DC Collector Current:

0.5 A

Gain Bandwidth Product fT:

200 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Height:

5.33 mm

Length:

5.2 mm

Packaging:

Ammo Pack

Width:

4.19 mm

Brand:

ON Semiconductor

Continuous Collector Current:

0.5 A

DC Collector/Base Gain hfe Min:

20

Pd - Power Dissipation:

625 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

2000

Subcategory:

Transistors

Tags

2N6517R, 2N6517, 2N651, 2N65, 2N6