A2V09H525-04NR6

Product Attribute

Attribute Value

Manufacturer:

NXP

Product Category:

RF MOSFET Transistors

RoHS:

Y

Transistor Polarity:

Dual N-Channel

Technology:

Si

Id - Continuous Drain Current:

2.8 A

Vds - Drain-Source Breakdown Voltage:

- 500 mV, 105 V

Gain:

18.9 dB

Output Power:

120 W

Minimum Operating Temperature:

- 40 C

Maximum Operating Temperature:

+ 150 C

Mounting Style:

SMD/SMT

Package / Case:

OM-1230-4

Packaging:

Reel

Operating Frequency:

720 MHz to 960 MHz

Type:

RF Power MOSFET

Brand:

NXP / Freescale

Number of Channels:

2 Channel

Moisture Sensitive:

Yes

Product Type:

RF MOSFET Transistors

Factory Pack Quantity:

150

Subcategory:

MOSFETs

Vgs - Gate-Source Voltage:

- 6 V, 10 V

Vgs th - Gate-Source Threshold Voltage:

1.3 V

Part # Aliases:

935330045528

Unit Weight:

0.187784 oz

Tags

A2V09, A2V0, A2V