IPB60R950C6ATMA1

IPB60R950C6ATMA1
Mfr. #:
IPB60R950C6ATMA1
メーカー:
Infineon Technologies
説明:
MOSFET LOW POWER_LEGACY
ライフサイクル:
メーカー新製品
データシート:
IPB60R950C6ATMA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
TO-263-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
構成:
独身
商標名:
CoolMOS
包装:
リール
高さ:
4.4 mm
長さ:
10 mm
トランジスタタイプ:
1 N-Channel
幅:
9.25 mm
ブランド:
インフィニオンテクノロジーズ
製品タイプ:
MOSFET
サブカテゴリ:
MOSFET
パーツ番号エイリアス:
IPB60R950C6ATMA1 SP000660620
単位重量:
0.139332 oz
Tags
IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
TransMOSFETNCH600V44A4Pin3TabTO263
***ineonSCT
CoolMOSC6combinesInfineonsexperienceastheleadingsuperjunctionMOSFETsupplierwithbestinclassinnovationPGTO2633RoHS
***ment14APAC
MOSFETNCH600V44ATO263;TransistorPolarityNChannel;ContinuousDrainCurrentId44A;DrainSourceVoltageVds600V;OnResistanceRdson086ohm;RdsonTestVoltageVgs10V;ThresholdVoltageVgsTyp3V;PowerDissipationPd37W;OperatingTemperatureRange55Cto150C;TransistorCaseStyleTO263;NoofPins2;SVHCNoSVHC20Jun2011;CurrentIdMax44A;PowerDissipationPd37W;VoltageVgsMax30V
***ineon
CoolMOSC6combinesInfineonsexperienceastheleadingsuperjunctionMOSFETsupplierwithbestinclassinnovationTheC6devicesprovideallbenefitsofafastswitchingSJMOSFETwhilenotsacrificingeaseofuseExtremelylowswitchingandconductionlossesmakeswitchingapplicationsevenmoreefficientcompactlighterandcoolerSummaryofFeaturesEasycontrolofswitchingbehavior;ExtremelylowlossesduetoverylowFigureofMeritRDSonQgandEoss;Veryhighcommutationruggedness;Easytouse;BetterlightloadefficiencycomparedtoC3;OutstandingreliabilitywithprovenCoolMOSqualitycombinedwithhighbodydioderuggedness;BetterpriceperformanceincomparisontopreviousCoolMOSgenerations;MoreefficientmorecompactlighterandcoolerBenefitsImprovedpowerdensity;Improvedreliability;Generalpurposepartcanbeusedinbothsoftandhardswitchingtopologies;Betterlightloadeffciency;Improvedeffciencyinhardswitchingapplications;Improvedeaseofuse;ReducespossibleringingduetopcblayoutandpackageparasiticeffectsTargetApplicationsConsumer;Adapter;eMobility;PFCstagesforserver&telecom;SMPS;PCpower;Solar;Lighting
モデル メーカー 説明 ストック 価格
IPB60R950C6ATMA1
DISTI # IPB60R950C6ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 600V 4.4A TO263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    IPB60R950C6ATMA1
    DISTI # IPB60R950C6ATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 600V 4.4A TO263
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IPB60R950C6ATMA1
      DISTI # IPB60R950C6ATMA1DKR-ND
      Infineon Technologies AGMOSFET N-CH 600V 4.4A TO263
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IPB60R950C6ATMA1
        DISTI # IPB60R950C6ATMA1
        Infineon Technologies AGTrans MOSFET N-CH 600V 4.4A 4-Pin(3+Tab) TO-263 - Bulk (Alt: IPB60R950C6ATMA1)
        Min Qty: 625
        Container: Bulk
        Americas - 0
        • 6250:$0.5079
        • 3125:$0.5169
        • 1875:$0.5349
        • 1250:$0.5549
        • 625:$0.5759
        IPB60R950C6ATMA1
        DISTI # 30T1834
        Infineon Technologies AGMOSFET, N CH, 650V, 4.4A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:4.4A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.86ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Product Range:- RoHS Compliant: Yes0
          IPB60R950C6ATMA1
          DISTI # N/A
          Infineon Technologies AGMOSFET LOW POWER_LEGACY0
            IPB60R950C6
            DISTI # 726-IPB60R950C6
            Infineon Technologies AGMOSFET N-Ch 650V 4.4A D2PAK-2 CoolMOS C6
            RoHS: Compliant
            0
            • 1:$1.2600
            • 10:$1.0800
            • 100:$0.8250
            • 500:$0.7290
            • 1000:$0.5750
            IPB60R950C6ATMA1Infineon Technologies AGPower Field-Effect Transistor, 4.4A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
            RoHS: Compliant
            4
            • 1000:$0.5300
            • 500:$0.5500
            • 100:$0.5800
            • 25:$0.6000
            • 1:$0.6500
            IPB60R950C6ATMA1
            DISTI # 8269500P
            Infineon Technologies AGMOSFET N-CH 4.4A 600V COOLMOS C6 TO263-4, RL5000
            • 500:£0.6780
            • 200:£0.6980
            IPB60R950C6ATMA1
            DISTI # 1860809
            Infineon Technologies AGMOSFET,N CH,600V,4.4A,TO263
            RoHS: Compliant
            0
            • 1000:$0.8670
            • 500:$1.1000
            • 100:$1.2400
            • 10:$1.6300
            • 1:$1.9000
            画像 モデル 説明
            IPB60R950C6ATMA1

            Mfr.#: IPB60R950C6ATMA1

            OMO.#: OMO-IPB60R950C6ATMA1

            MOSFET LOW POWER_LEGACY
            IPB60R950C6ATMA1

            Mfr.#: IPB60R950C6ATMA1

            OMO.#: OMO-IPB60R950C6ATMA1-INFINEON-TECHNOLOGIES

            MOSFET N-CH 600V 4.4A TO263
            IPB60R950C6

            Mfr.#: IPB60R950C6

            OMO.#: OMO-IPB60R950C6-1190

            MOSFET N-Ch 650V 4.4A D2PAK-2 CoolMOS C6
            可用性
            ストック:
            Available
            注文中:
            3500
            数量を入力してください:
            IPB60R950C6ATMA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
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