BSC123N08NS3 G

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TDSON-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

80 V

Id - Continuous Drain Current:

55 A

Rds On - Drain-Source Resistance:

10.3 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

25 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

66 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

OptiMOS

Packaging:

Reel

Height:

1.27 mm

Length:

5.9 mm

Series:

OptiMOS 3

Transistor Type:

1 N-Channel

Width:

5.15 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

22 S

Fall Time:

4 ns

Product Type:

MOSFET

Rise Time:

18 ns

Factory Pack Quantity:

5000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

19 ns

Typical Turn-On Delay Time:

12 ns

Part # Aliases:

BSC123N08NS3GATMA1 BSC123N8NS3GXT SP000443916

Unit Weight:

0.003527 oz

Tags

BSC123N08NS3G, BSC123N08NS, BSC123N0, BSC123, BSC12, BSC1, BSC