JANSR2N5153/TR

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

Bipolar Transistors - BJT

RoHS:

N

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-39-3

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

80 V

Collector- Base Voltage VCBO:

100 V

Emitter- Base Voltage VEBO:

5.5 V

Collector-Emitter Saturation Voltage:

1.5 V

Maximum DC Collector Current:

2 A

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 200 C

DC Current Gain hFE Max:

200 at 2.5 A, 5 V

Brand:

Microchip / Microsemi

DC Collector/Base Gain hfe Min:

40 at 5 A, 5 V

Pd - Power Dissipation:

1 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

1

Subcategory:

Transistors

Tags

JANSR2N51, JANSR2N5, JANSR2, JANSR, JANS, JAN