 |  | | |
| PartNumber | JANSR2N5153/TR | JANSR2N5154 | JANSR2N5154L |
| Description | Bipolar Transistors - BJT | M/A-COM Technology Solutions HI-REL DISCRETE | M/A-COM Technology Solutions HI-REL DISCRETE |
| Manufacturer | Microchip | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | N | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-39-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 80 V | - | - |
| Collector Base Voltage VCBO | 100 V | - | - |
| Emitter Base Voltage VEBO | 5.5 V | - | - |
| Collector Emitter Saturation Voltage | 1.5 V | - | - |
| Maximum DC Collector Current | 2 A | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 200 C | - | - |
| DC Current Gain hFE Max | 200 at 2.5 A, 5 V | - | - |
| Brand | Microchip / Microsemi | - | - |
| DC Collector/Base Gain hfe Min | 40 at 5 A, 5 V | - | - |
| Pd Power Dissipation | 1 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | Transistors | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Microchip / Microsemi |
JANSR2N5153/TR | Bipolar Transistors - BJT | |
| JANSR2N5154 | M/A-COM Technology Solutions HI-REL DISCRETE | ||
| JANSR2N5154L | M/A-COM Technology Solutions HI-REL DISCRETE | ||
| JANSR2N5339 | M/A-COM Technology Solutions HI-REL DISCRETE | ||
| JANSR2N5794U | - Bulk (Alt: JANSR2N5794U) | ||
| JANSR2N5401UBT | Trans GP BJT PNP 150V 0.5A 4-Pin UB - Bulk (Alt: JANSR2N5401UBT) | ||
| JANSR2N5401UBG | Hi-Rel Bipolar Transistor PNP 150V -0.5A Gold 4-Pin UB SMD Waffle Pack - Bulk (Alt: JANSR2N5401UBG) | ||
| JANSR2N5796U | - Bulk (Alt: JANSR2N5796U) | ||
| JANSR2N5551UBG | Trans GP BJT NPN 160V 0.5A 4-Pin UB Waffle - Bulk (Alt: JANSR2N5551UBG) | ||
| JANSR2N5551UBT | Trans GP BJT NPN 160V 0.5A 4-Pin UB - Bulk (Alt: JANSR2N5551UBT) |