MR0A16AMA35R

Mfr. #:: MR0A16AMA35R
メーカー:: Everspin Technologies
説明:: IC RAM 1M PARALLEL 48FBGA
ライフサイクル:: メーカー新製品
データシート:: MR0A16AMA35R データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:: MR0A16AMA35R 詳しくは

製品属性
属性値

メーカー: Everspin Technologies Inc.

製品カテゴリ: メモリー

シリーズ: -

包装: テープ＆リール（TR）代替パッケージ

パッケージ-ケース: 48-LFBGA

作動温度: 0°C ~ 70°C (TA)

インターフェース: 平行

電圧供給: 3 V ~ 3.6 V

サプライヤー-デバイス-パッケージ: 48-FBGA (8x8)

メモリー容量: 1M (64K x 16)

メモリタイプ: MRAM（磁気抵抗RAM）

スピード: 35ns

フォーマット-メモリ: 羊

Tags: MR0A16AM, MR0A1, MR0A, MR0

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MR0A16AMA35R 評価とレビュー

F***e

I'm fast.. All perfect!

2019-07-30

W***t

Good service.

2019-08-08

A***n

All ok

2019-09-17

M***v

Everything is fine. Thanks!

2019-04-06

MR0A16AMA35R 説明

***i-Key: IC RAM 1M PARALLEL 48FBGA

MR0A16AMA35R 詳しくは

Magnetoresistive Random Access Memory (MRAM): Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

Everspin MRAM

MR0A08B / MR0D08B / MR0A16A 1Mb Parallel MRAM: Everspin Technologies MR0A08B, MR0D08B, and MR0A16A are 1,048,576-bit magnetoresistive random access memory (MRAM) devices. The Everspin MRAM devices are available in a variety of specifications, such as dual supply, serial SPI, and organized as 131,072 words of 8 bits or 65,536 words of 16 bits. These MRAM devices are as fast 35ns or 45ns read/write timing cycles with no write delays and unlimited read/write endurance.

Market price

モデル	メーカー	説明	ストック	価格
MR0A16AMA35R DISTI # MR0A16AMA35R-ND	Everspin Technologies	IC RAM 1M PARALLEL 48FBGA RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	Temporarily Out of Stock	2000:$10.4280
MR0A16AMA35 DISTI # 936-MR0A16AMA35	Everspin Technologies	NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM RoHS: Compliant	0	696:$8.6800
MR0A16AMA35R DISTI # 936-MR0A16AMA35R	Everspin Technologies	NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM RoHS: Compliant	0	2000:$8.3700

関連製品

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	Mfr.#: MR0A16ACMA35R OMO.#: OMO-MR0A16ACMA35R	NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM
	Mfr.#: MR0A16AMYS35 OMO.#: OMO-MR0A16AMYS35	NVRAM 1Mb 3.3V 64K x 16 35ns Parallel MRAM
	Mfr.#: MR0A16AMA35R OMO.#: OMO-MR0A16AMA35R	NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM
	Mfr.#: MR0A16AVMA35R OMO.#: OMO-MR0A16AVMA35R	NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM
	Mfr.#: MR0A16AYS35 OMO.#: OMO-MR0A16AYS35	NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM
	Mfr.#: MR0A16AVYS35 OMO.#: OMO-MR0A16AVYS35-EVERSPIN-TECHNOLOGIES	NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM
	Mfr.#: MR0A16ACYS35 OMO.#: OMO-MR0A16ACYS35-EVERSPIN-TECHNOLOGIES	NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM
	Mfr.#: MR0A16AMYS35R OMO.#: OMO-MR0A16AMYS35R-EVERSPIN-TECHNOLOGIES	NVRAM 1Mb 3.3V 64K x 16 35ns Parallel MRAM
	Mfr.#: MR0A16AMA35R OMO.#: OMO-MR0A16AMA35R-EVERSPIN-TECHNOLOGIES	IC RAM 1M PARALLEL 48FBGA
	Mfr.#: MR0A16AVYS35R OMO.#: OMO-MR0A16AVYS35R-EVERSPIN-TECHNOLOGIES	NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM