IRF7701GTRPBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TSSOP-8

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

12 V

Id - Continuous Drain Current:

10 A

Rds On - Drain-Source Resistance:

11 mOhms

Vgs - Gate-Source Voltage:

8 V

Qg - Gate Charge:

69 nC

Pd - Power Dissipation:

1.5 W

Configuration:

Single

Packaging:

Reel

Height:

1.2 mm

Length:

4.4 mm

Transistor Type:

1 P-Channel

Width:

3 mm

Brand:

Infineon / IR

Product Type:

MOSFET

Factory Pack Quantity:

4000

Subcategory:

MOSFETs

Unit Weight:

0.005573 oz

Tags

IRF7701, IRF770, IRF77, IRF7, IRF