PXAC192908FVV1R250XTMA1

Mfr. #:: PXAC192908FVV1R250XTMA1
メーカー:: Infineon Technologies
説明:: RF MOSFET Transistors RFP-LD10M
ライフサイクル:: メーカー新製品
データシート:: PXAC192908FVV1R250XTMA1 データシート
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製品属性
属性値

メーカー: インフィニオンテクノロジーズ

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

包装: リール

パーツエイリアス: PXAC192908FV R250 SP001286760 V1

パッケージ-ケース: H-37275-6

テクノロジー: Si

Tags: PXAC192908FVV1R, PXAC192908FVV, PXAC19, PXAC1, PXAC, PXA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

PXAC192908FVV1R250XTMA1 説明

***et: Trans MOSFET 65V 7-Pin H-37275G-6/2 T/R

***i-Key: IC AMP RF LDMOS

***ure Electronics: P-Channel 20 V 38 mO 9.1 nC SMT Enhancement Mode Mosfet - SOT-23

***ical: Trans MOSFET P-CH 20V 4.3A Automotive 3-Pin SOT-23 T/R

***nell: MOSFET, P-CH, -20V, SOT-23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -4.3A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.4V; Power Dissipation Pd: 800mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***p One Stop Global: Trans RF MOSFET N-CH 12V 0.03A 4-Pin(3+Tab) SOT-143 T/R

***nell: RF FET, 12V, 0.03A, SOT-143; Transistor Polarity: N Channel; Continuous Drain Current Id: 30mA; Drain Source Voltage Vds: 12V; On Resistance Rds(on): -; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation

***ineon: Silicon N-Channel MOSFET Triode | Summary of Features: Short-channel transistor with high S / C quality factor; For low-noise, gain-controlled input stage up to 1 GHz; Pb-free (RoHS compliant) package; Qualified according AEC Q101 | Target Applications: Set Top Box; TV; Car Radio

***ure Electronics: Single N-Channel 200 V 0.18 Ohms Surface Mount Power Mosfet - D2PAK-3

***ark: N CHANNEL MOSFET, 200V, 17A SMD-220; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:17A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: No

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ure Electronics: N-Channel 50 V 16 A 0.047 Ohm Surface Mount Power Mosfet - TO-252AA

***emi: N-Channel Logic Level Power MOSFET 50V, 16A, 47mΩ

***ment14 APAC: MOSFET, N-CH, 50V, 16A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Source Voltage Vds:50V; On Resistance

***roFlash: Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.

***emi: Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 6.5A, 30mΩ

***ure Electronics: Dual N-Channel 20 V 30 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

***Yang: Transistor MOSFET Array Dual N-CH 20V 6.5A 8-Pin SOIC T/R - Product that comes on tape, but is not r

***el Electronic: ON SEMICONDUCTOR - FDS9926A - Dual MOSFET, Dual N Channel, 6.5 A, 20 V, 0.025 ohm, 4.5 V, 1 V

***ment14 APAC: MOSFET, DUAL, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.5A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:4.5V

***rchild Semiconductor: These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V).

***(Formerly Allied Electronics): IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223

***eco: Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3

*** Source Electronics: Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223

***nsix Microsemi: Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Market price

モデル	メーカー	説明	ストック	価格
PXAC192908FV-V1-R250 DISTI # PXAC192908FV-V1-R250-ND	Wolfspeed	IC AMP RF LDMOS RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	Temporarily Out of Stock	250:$134.8580
PXAC192908FVV1R250XTMA1 DISTI # 726-PXAC192908FVV1R2	Infineon Technologies AG	RF MOSFET Transistors RFP-LD10M	0

画像	モデル	説明
	Mfr.#: PXAC192908FV-V1-R0 OMO.#: OMO-PXAC192908FV-V1-R0	RF MOSFET Transistors RF LDMOS FET
	Mfr.#: PXAC192908FV-V1-R250 OMO.#: OMO-PXAC192908FV-V1-R250	RF MOSFET Transistors RF LDMOS FET
	Mfr.#: PXAC192908FV V1 R250 OMO.#: OMO-PXAC192908FV--V1--R250	RF MOSFET Transistors RFP-LD10M
	Mfr.#: PXAC192908FV-V1 OMO.#: OMO-PXAC192908FV-V1-1152	RF MOSFET TRANSISTORS
	Mfr.#: PXAC192908FV-V1-R0 OMO.#: OMO-PXAC192908FV-V1-R0-1152	RF MOSFET TRANSISTORS
	Mfr.#: PXAC192908FV-V1-R250 OMO.#: OMO-PXAC192908FV-V1-R250-WOLFSPEED	IC AMP RF LDMOS
	Mfr.#: PXAC192908FVV1XWSA1 OMO.#: OMO-PXAC192908FVV1XWSA1-319	RF MOSFET Transistors RFP-LD10M
	Mfr.#: PXAC192908FVV1R0XTMA1 OMO.#: OMO-PXAC192908FVV1R0XTMA1-319	RF MOSFET Transistors
	Mfr.#: PXAC192908FVV1R250XTMA1 OMO.#: OMO-PXAC192908FVV1R250XTMA1-319	RF MOSFET Transistors RFP-LD10M

PXAC192908FVV1R250XTMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes