SI2312DS-T1-E3

SI2312DS-T1-E3
Mfr. #:
SI2312DS-T1-E3
メーカー:
Vishay Intertechnologies
説明:
MOSFET, FULL REEL, Transistor Polarity:N Channel, Continuous Drain Current Id:4.9A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.033ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage
ライフサイクル:
メーカー新製品
データシート:
SI2312DS-T1-E3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
製品属性
属性値
Tags
SI2312DS-T, SI2312D, SI2312, SI231, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET; N-Channel; 0.027 Ohms (Typ.) @ 4.5 V, 0.042 Ohms (Typ.) @ 1.8 V; 3.77 A
*** Americas
MOSFET N-CH VDS20V VGS 8V ID4.9A
***nell
MOSFET, N, TO-236; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:4.9A; On State Resistance:0.033ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.65V; Case Style:TO-236; Termination Type:SMD
モデル メーカー 説明 ストック 価格
SI2312DS-T1-E3
DISTI # 06J7575
Vishay IntertechnologiesMOSFET, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:4.9A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.033ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:650mV,Power Dissipation Pd:750mW RoHS Compliant: Yes0
    SI2312DS-T1-E3
    DISTI # 781-SI2312DS-E3
    Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI2312BDS-E3
    RoHS: Compliant
    0
      SI2312DS-T1-E3Vishay Intertechnologies 3
        画像 モデル 説明
        SI2312DS

        Mfr.#: SI2312DS

        OMO.#: OMO-SI2312DS-1190

        ブランドニューオリジナル
        SI2312DS-T1

        Mfr.#: SI2312DS-T1

        OMO.#: OMO-SI2312DS-T1-1190

        MOSFET RECOMMENDED ALT 781-SI2312BDS-E3
        SI2312DS-T1-E3

        Mfr.#: SI2312DS-T1-E3

        OMO.#: OMO-SI2312DS-T1-E3-1190

        MOSFET, FULL REEL, Transistor Polarity:N Channel, Continuous Drain Current Id:4.9A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.033ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage
        SI2312DS-T1-GE3

        Mfr.#: SI2312DS-T1-GE3

        OMO.#: OMO-SI2312DS-T1-GE3-1190

        ブランドニューオリジナル
        SI2312DS-T1/C2T0D

        Mfr.#: SI2312DS-T1/C2T0D

        OMO.#: OMO-SI2312DS-T1-C2T0D-1190

        ブランドニューオリジナル
        可用性
        ストック:
        Available
        注文中:
        4000
        数量を入力してください:
        SI2312DS-T1-E3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
        参考価格(USD)
        単価
        小計金額
        1
        $0.00
        $0.00
        10
        $0.00
        $0.00
        100
        $0.00
        $0.00
        500
        $0.00
        $0.00
        1000
        $0.00
        $0.00
        2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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