SI4488DY-T1-GE3

SI4488DY-T1-GE3
Mfr. #:
SI4488DY-T1-GE3
メーカー:
Vishay
説明:
RF Bipolar Transistors MOSFET 150V 5.0A 3.1W 50mohm @ 10V
ライフサイクル:
メーカー新製品
データシート:
SI4488DY-T1-GE3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
詳しくは:
SI4488DY-T1-GE3 詳しくは
製品属性
属性値
メーカー
VISHAY
製品カテゴリ
FET-シングル
包装
リール
パーツエイリアス
SI4488DY-GE3
単位重量
0.017870 oz
取り付けスタイル
SMD / SMT
パッケージ-ケース
SO-8
テクノロジー
Si
チャネル数
1 Channel
構成
独身
トランジスタタイプ
1 N-Channel
Pd-電力損失
1.56 W
最高作動温度
+ 150 C
最低作動温度
- 55 C
Vgs-Gate-Source-Voltage
20 V
Id-連続-ドレイン-電流
3.5 A
Vds-ドレイン-ソース-ブレークダウン-電圧
150 V
Rds-On-Drain-Source-Resistance
50 mOhms
トランジスタ-極性
Nチャネル
Tags
SI4488DY-T, SI4488D, SI4488, SI448, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:5A; Drain Source Voltage, Vds:150V; On Resistance, Rds(on):0.05ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET,N CH,DIODE,150V,5A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.041ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5A; Power Dissipation Pd:3.1W; Voltage Vgs Max:20V
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
モデル メーカー 説明 ストック 価格
SI4488DY-T1-GE3
DISTI # V72:2272_09216519
Vishay IntertechnologiesTrans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R
RoHS: Compliant
2972
  • 1000:$0.9829
  • 500:$1.1554
  • 250:$1.2707
  • 100:$1.3159
  • 25:$1.5285
  • 10:$1.6375
  • 1:$1.9008
SI4488DY-T1-GE3
DISTI # SI4488DY-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 150V 3.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2160In Stock
  • 1000:$0.9839
  • 500:$1.1875
  • 100:$1.5268
  • 10:$1.9000
  • 1:$2.1000
SI4488DY-T1-GE3
DISTI # SI4488DY-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 150V 3.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2160In Stock
  • 1000:$0.9839
  • 500:$1.1875
  • 100:$1.5268
  • 10:$1.9000
  • 1:$2.1000
SI4488DY-T1-GE3
DISTI # SI4488DY-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 150V 3.5A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.8894
SI4488DY-T1-GE3
DISTI # 25790120
Vishay IntertechnologiesTrans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R
RoHS: Compliant
2972
  • 1000:$0.9829
  • 500:$1.1554
  • 250:$1.2707
  • 100:$1.3159
  • 25:$1.5286
  • 10:$1.6375
  • 7:$1.9008
SI4488DY-T1-GE3
DISTI # 31237008
Vishay IntertechnologiesTrans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R
RoHS: Compliant
2500
  • 2500:$0.8926
SI4488DY-T1-GE3
DISTI # SI4488DY-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4488DY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.5769
  • 5000:$0.5599
  • 10000:$0.5369
  • 15000:$0.5219
  • 25000:$0.5079
SI4488DY-T1-GE3
DISTI # 15R5041
Vishay IntertechnologiesN CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:5A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.041ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:3.1W RoHS Compliant: Yes0
  • 1:$1.4300
  • 1000:$1.3500
  • 2000:$1.2800
  • 4000:$1.1500
  • 6000:$1.1100
  • 10000:$1.0700
SI4488DY-T1-GE3
DISTI # 23T8512
Vishay IntertechnologiesMOSFET Transistor, N Channel, 5 A, 150 V, 0.041 ohm, 10 V, 2 V RoHS Compliant: Yes2229
  • 1:$2.3200
  • 10:$1.9300
  • 25:$1.7900
  • 50:$1.6400
  • 100:$1.5000
  • 250:$1.4100
  • 500:$1.3100
SI4488DY-T1-GE3
DISTI # 781-SI4488DY-GE3
Vishay IntertechnologiesMOSFET 150V Vds 20V Vgs SO-8
RoHS: Compliant
1460
  • 1:$2.3200
  • 10:$1.9300
  • 100:$1.5000
  • 500:$1.3100
  • 1000:$1.0900
  • 2500:$1.0100
SI4488DYT1GE3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 3.5A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
Europe - 2500
    SI4488DY-T1-GE3
    DISTI # 1858958RL
    Vishay IntertechnologiesMOSFET,N CH,DIODE,150V,5A,8-SOIC
    RoHS: Compliant
    0
    • 1:$3.3500
    • 10:$3.0300
    • 100:$2.4400
    • 500:$1.9000
    • 1000:$1.5700
    SI4488DY-T1-GE3
    DISTI # 1858958
    Vishay IntertechnologiesMOSFET,N CH,DIODE,150V,5A,8-SOIC
    RoHS: Compliant
    2229
    • 1:$3.3500
    • 10:$3.0300
    • 100:$2.4400
    • 500:$1.9000
    • 1000:$1.5700
    SI4488DY-T1-GE3
    DISTI # C1S803600999653
    Vishay IntertechnologiesMOSFETs2972
    • 250:$1.2707
    • 100:$1.3159
    • 25:$1.5286
    • 10:$1.6375
    SI4488DY-T1-GE3
    DISTI # 1858958
    Vishay IntertechnologiesMOSFET,N CH,DIODE,150V,5A,8-SOIC
    RoHS: Compliant
    2474
    • 5:£1.6100
    • 25:£1.4900
    • 100:£1.1500
    • 250:£1.0400
    • 500:£0.9380
    画像 モデル 説明
    SI4488DY-T1-GE3

    Mfr.#: SI4488DY-T1-GE3

    OMO.#: OMO-SI4488DY-T1-GE3

    MOSFET 150V Vds 20V Vgs SO-8
    SI4488DY-T1-E3

    Mfr.#: SI4488DY-T1-E3

    OMO.#: OMO-SI4488DY-T1-E3

    MOSFET 150V Vds 20V Vgs SO-8
    SI4488DY-T1-GE3

    Mfr.#: SI4488DY-T1-GE3

    OMO.#: OMO-SI4488DY-T1-GE3-VISHAY

    RF Bipolar Transistors MOSFET 150V 5.0A 3.1W 50mohm @ 10V
    SI4488DY-T1-E3-CUT TAPE

    Mfr.#: SI4488DY-T1-E3-CUT TAPE

    OMO.#: OMO-SI4488DY-T1-E3-CUT-TAPE-1190

    ブランドニューオリジナル
    SI4488DY

    Mfr.#: SI4488DY

    OMO.#: OMO-SI4488DY-1190

    MOSFET 150V Vds 20V Vgs SO-8
    SI4488DY-T1-E3

    Mfr.#: SI4488DY-T1-E3

    OMO.#: OMO-SI4488DY-T1-E3-VISHAY

    MOSFET N-CH 150V 3.5A 8-SOIC
    可用性
    ストック:
    Available
    注文中:
    2500
    数量を入力してください:
    SI4488DY-T1-GE3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $0.76
    $0.76
    10
    $0.72
    $7.24
    100
    $0.69
    $68.57
    500
    $0.65
    $323.80
    1000
    $0.61
    $609.50
    2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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