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SGF80N60UFTU

SGF80N60UFTU
Mfr. #:
SGF80N60UFTU
メーカー:
ON Semiconductor / Fairchild
説明:
IGBT Transistors Discrete Hi-P IGBT
ライフサイクル:
メーカー新製品
データシート:
SGF80N60UFTU データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー：
オン・セミコンダクター
製品カテゴリ：
IGBTトランジスタ
JBoss：
Y
テクノロジー：
Si
パッケージ/ケース：
TO-3PF-3
取り付けスタイル：
スルーホール
構成：
独身
コレクター-エミッター電圧VCEOMax：
600 V
最大ゲートエミッタ電圧：
20 V
最低動作温度：
- 55 C
最高作動温度：
+ 150 C
シリーズ：
SGF80N60UF
包装：
チューブ
連続コレクタ電流IcMax：
80 A
高さ：
16.7 mm
長さ：
15.7 mm
幅：
5.7 mm
ブランド：
オン・セミコンダクター/フェアチャイルド
製品タイプ：
IGBTトランジスタ
ファクトリーパックの数量：
360
サブカテゴリ：
IGBT
単位重量：
0.245577 oz
Tags
SGF80, SGF8, SGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-3PF Rail
***r Electronics
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel
***emi
Discrete, High Performance IGBT
*** Electronic Components
IGBT Transistors Discrete Hi-P IGBT
***nell
SGF80N60UFTU, SINGLE BIPOLAR TRANSISTORS;
***rchild Semiconductor
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching is required.
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Trans IGBT Chip N-CH 600V 40A 100000mW 3-Pin(3+Tab) TO-3PF Rail
***el Electronic
FAIRCHILD SEMICONDUCTOR FGAF40N60UFTU IGBT Single Transistor, General Purpose, 40 A, 600 V, 100 W, 600 V, TO-3PF, 3 Pins
***nell
IGBT,N CH,FAST W/DIO,600V,40A,TO-3PF; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3PF; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:100W
***th Star Micro
Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Product Highlights: High speed switching Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A High input impedance
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FAIRCHILD SEMICONDUCTOR FGAF40N60UFDTU IGBT Single Transistor, General Purpose, 40 A, 600 V, 100 W, 600 V, TO-3PF, 3 Pins
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IGBT,N CH,FAST W/DIO,600V,40A,TO-3PF; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3PF; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:100W
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Using novel field stop IGBT technology, Fairchild’s Field Stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
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Ptpigbt To3Pf 12A 600V Rohs Compliant: Yes
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INSULATED GATE BIPOLAR TRANSISTO
***rchild Semiconductor
Fairchild’s UF series IGBTs provide low conduction and switching losses. UF series is designed for the applications such as general inverters and PFC where High Speed Switching is required feature.
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モデル メーカー 説明 ストック 価格
SGF80N60UFTU
DISTI # 26885511		ON SemiconductorTrans IGBT Chip N-CH 600V 80A 110000mW 3-Pin(3+Tab) TO-3PF Tube1440
  • 720:$5.2985
  • 360:$5.4641
SGF80N60UFTU
DISTI # SGF80N60UFTU-ND		ON SemiconductorIGBT 600V 80A 110W TO3PF
RoHS: Compliant
Min Qty: 360
Container: Tube		Limited Supply - Call
  • 360:$4.6496
SGF80N60UFTU
DISTI # SGF80N60UFTU		ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-3PF Rail - Rail/Tube (Alt: SGF80N60UFTU)
RoHS: Compliant
Min Qty: 360
Container: Tube		Americas - 0
  • 360:$3.0900
  • 720:$2.9900
  • 1440:$2.9900
  • 2160:$2.9900
  • 3600:$2.8900
SGF80N60UFTU
DISTI # SGF80N60UFTU		ON SemiconductorTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-3PF Rail (Alt: SGF80N60UFTU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€4.0900
  • 10:€3.2900
  • 25:€3.1900
  • 50:€2.9900
  • 100:€2.8900
  • 500:€2.8900
  • 1000:€2.7900
SGF80N60UFTU
DISTI # 512-SGF80N60UFTU		ON SemiconductorIGBT Transistors Discrete Hi-P IGBT
RoHS: Compliant		0
    SGF80N60UFTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel
    RoHS: Compliant    		23040
    • 1000:$5.5600
    • 500:$5.8500
    • 100:$6.0900
    • 25:$6.3500
    • 1:$6.8400
    画像 モデル 説明
    SGF80N60UFTU

    Mfr.#: SGF80N60UFTU

    OMO.#: OMO-SGF80N60UFTU

    		 IGBT Transistors Discrete Hi-P IGBT
    SGF80N60UF

    Mfr.#: SGF80N60UF

    OMO.#: OMO-SGF80N60UF-1190

    		 ブランドニューオリジナル
    SGF80N60UF G80N60UF

    Mfr.#: SGF80N60UF G80N60UF

    OMO.#: OMO-SGF80N60UF-G80N60UF-1190

    		 ブランドニューオリジナル
    SGF80N60UFTUPBF

    Mfr.#: SGF80N60UFTUPBF

    OMO.#: OMO-SGF80N60UFTUPBF-1190

    		 ブランドニューオリジナル
    SGF80N60UFTU

    Mfr.#: SGF80N60UFTU

    OMO.#: OMO-SGF80N60UFTU-ON-SEMICONDUCTOR

    		 IGBT Transistors Discrete Hi-P IGBT
    可用性
    ストック:
    Available
    注文中:
    4000
    数量を入力してください:
    SGF80N60UFTUの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格（USD）
    量
    単価
    小計金額
    360
    $4.42
    $1 591.20
    720
    $4.03
    $2 901.60
    1080
    $3.51
    $3 790.80
    2520
    $3.38
    $8 517.60
    2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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