DMN1004UFDF-13

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

U-DFN2020-6

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

12 V

Id - Continuous Drain Current:

15 A

Rds On - Drain-Source Resistance:

4.1 mOhms

Vgs th - Gate-Source Threshold Voltage:

300 mV

Vgs - Gate-Source Voltage:

8 V

Qg - Gate Charge:

47 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

2.1 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Transistor Type:

1 N-Channel

Brand:

Diodes Incorporated

Fall Time:

16.9 ns

Product Type:

MOSFET

Rise Time:

10.7 ns

Factory Pack Quantity:

10000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

31.6 ns

Typical Turn-On Delay Time:

5.3 ns

Unit Weight:

0.000247 oz

Tags

DMN1004, DMN100, DMN10, DMN1, DMN