IPI076N12N3 G

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-262-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

120 V

Id - Continuous Drain Current:

100 A

Rds On - Drain-Source Resistance:

7.6 mOhms

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

76 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

188 W

Configuration:

Single

Tradename:

OptiMOS

Packaging:

Tube

Height:

9.45 mm

Length:

10.2 mm

Series:

OptiMOS 3

Transistor Type:

1 N-Channel

Width:

4.5 mm

Brand:

Infineon Technologies

Fall Time:

10 ns

Product Type:

MOSFET

Rise Time:

50 nS

Factory Pack Quantity:

500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

39 nS

Part # Aliases:

IPI076N12N3GAKSA1 IPI76N12N3GXK SP000652738

Unit Weight:

0.084199 oz

Tags

IPI076N12N3G, IPI076N12, IPI076, IPI07, IPI0, IPI