SI4463BDY-T1-GE3

SI4463BDY-T1-GE3
Mfr. #:
SI4463BDY-T1-GE3
メーカー:
Vishay
説明:
RF Bipolar Transistors MOSFET 20V 13.7A 3.0W 11mohm @ 10V
ライフサイクル:
メーカー新製品
データシート:
SI4463BDY-T1-GE3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
詳しくは:
SI4463BDY-T1-GE3 詳しくは
製品属性
属性値
メーカー
VISHAY
製品カテゴリ
ICチップ
Tags
SI4463BD, SI4463B, SI4463, SI446, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***nell
P CHANNEL MOSFET, -20V, 13.7A, SOIC
***et
Trans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R
***ment14 APAC
P CHANNEL MOSFET, -20V, 13.7A, SOIC; Tra; P CHANNEL MOSFET, -20V, 13.7A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:13.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:-2.5V; Threshold Voltage Vgs Typ:-1.4V
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
モデル メーカー 説明 ストック 価格
SI4463BDY-T1-GE3
DISTI # SI4463BDY-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 20V 9.8A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2490In Stock
  • 1000:$0.7233
  • 500:$0.9162
  • 100:$1.1814
  • 10:$1.4950
  • 1:$1.6900
SI4463BDY-T1-GE3
DISTI # SI4463BDY-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 20V 9.8A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2490In Stock
  • 1000:$0.7233
  • 500:$0.9162
  • 100:$1.1814
  • 10:$1.4950
  • 1:$1.6900
SI4463BDY-T1-GE3
DISTI # SI4463BDY-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 20V 9.8A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.6554
SI4463BDY-T1-GE3
DISTI # SI4463BDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R (Alt: SI4463BDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 0
    SI4463BDY-T1-GE3
    DISTI # SI4463BDY-T1-GE3
    Vishay IntertechnologiesTrans MOSFET P-CH 20V 9.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4463BDY-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 2500:$0.6559
    • 5000:$0.6539
    • 10000:$0.6519
    • 15000:$0.6499
    • 25000:$0.6479
    SI4463BDY-T1-GE3
    DISTI # 26R1879
    Vishay IntertechnologiesP CHANNEL MOSFET, -20V, 13.7A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:13.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:-2.5V,Threshold Voltage Vgs:-1.4V RoHS Compliant: Yes0
    • 1:$1.5800
    • 10:$1.3100
    • 25:$1.2100
    • 50:$1.1200
    • 100:$1.0200
    • 250:$0.9530
    • 500:$0.8850
    SI4463BDY-T1-GE3
    DISTI # 15R5028
    Vishay IntertechnologiesP CHANNEL MOSFET, -20V, 13.7A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:13.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:-2.5V,Threshold Voltage Vgs:-1.4V RoHS Compliant: Yes0
    • 1:$0.9580
    • 1000:$0.9010
    • 2000:$0.8550
    • 4000:$0.7700
    • 6000:$0.7410
    • 10000:$0.7130
    SI4463BDY-T1-GE3
    DISTI # 781-SI4463BDY-GE3
    Vishay IntertechnologiesMOSFET 20V 13.7A 3.0W 11mohm @ 10V
    RoHS: Compliant
    2429
    • 1:$1.5800
    • 10:$1.3100
    • 100:$1.0200
    • 500:$0.8850
    • 1000:$0.7340
    • 2500:$0.6830
    画像 モデル 説明
    SI4463BDY-T1-E3

    Mfr.#: SI4463BDY-T1-E3

    OMO.#: OMO-SI4463BDY-T1-E3

    MOSFET 20V 13.7A 0.011Ohm
    SI4463BDY-T1-GE3

    Mfr.#: SI4463BDY-T1-GE3

    OMO.#: OMO-SI4463BDY-T1-GE3

    MOSFET 20V 13.7A 3.0W 11mohm @ 10V
    SI4463BDY-T1-GE3

    Mfr.#: SI4463BDY-T1-GE3

    OMO.#: OMO-SI4463BDY-T1-GE3-VISHAY

    RF Bipolar Transistors MOSFET 20V 13.7A 3.0W 11mohm @ 10V
    SI4463BDY-T1-E3-CUT TAPE

    Mfr.#: SI4463BDY-T1-E3-CUT TAPE

    OMO.#: OMO-SI4463BDY-T1-E3-CUT-TAPE-1190

    ブランドニューオリジナル
    SI4463BDY-T1-E3

    Mfr.#: SI4463BDY-T1-E3

    OMO.#: OMO-SI4463BDY-T1-E3-VISHAY

    MOSFET P-CH 20V 9.8A 8-SOIC
    SI4463BDY-T1-EJ

    Mfr.#: SI4463BDY-T1-EJ

    OMO.#: OMO-SI4463BDY-T1-EJ-1190

    ブランドニューオリジナル
    可用性
    ストック:
    Available
    注文中:
    1500
    数量を入力してください:
    SI4463BDY-T1-GE3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $0.97
    $0.97
    10
    $0.92
    $9.23
    100
    $0.87
    $87.47
    500
    $0.83
    $413.05
    1000
    $0.78
    $777.50
    2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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