SIHW73N60E-GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247AD-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

73 A

Rds On - Drain-Source Resistance:

39 mOhms

Vgs th - Gate-Source Threshold Voltage:

4 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

241 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

520 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

20.82 mm

Length:

15.87 mm

Series:

E

Width:

5.31 mm

Brand:

Vishay / Siliconix

Fall Time:

120 ns

Product Type:

MOSFET

Rise Time:

105 ns

Factory Pack Quantity:

480

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

290 ns

Typical Turn-On Delay Time:

63 ns

Unit Weight:

1.340411 oz

Tags

SIHW7, SIHW, SIH