IRGSL4B60KD1PBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

IGBT Transistors

RoHS:

Y

Technology:

Si

Package / Case:

TO-262-3

Mounting Style:

Through Hole

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

600 V

Collector-Emitter Saturation Voltage:

2.1 V

Maximum Gate Emitter Voltage:

20 V

Continuous Collector Current at 25 C:

11 A

Pd - Power Dissipation:

63 W

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Series:

RC

Packaging:

Tube

Height:

9.65 mm

Length:

11.3 mm

Width:

4.83 mm

Brand:

Infineon / IR

Gate-Emitter Leakage Current:

100 nA

Product Type:

IGBT Transistors

Factory Pack Quantity:

50

Subcategory:

IGBTs

Tradename:

TRENCHSTOP

Part # Aliases:

SP001548286

Unit Weight:

0.073511 oz

Tags

IRGSL4, IRGSL, IRGS, IRG