STGW8M120DF3

STGW8M120DF3
Mfr. #:
STGW8M120DF3
メーカー:
STMicroelectronics
説明:
IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
ライフサイクル:
メーカー新製品
データシート:
STGW8M120DF3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
STGW8M120DF3 詳しくは STGW8M120DF3 Product Details
製品属性
属性値
メーカー:
STMicroelectronics
製品カテゴリ:
IGBTトランジスタ
JBoss:
Y
テクノロジー:
Si
パッケージ/ケース:
TO-247-3
取り付けスタイル:
スルーホール
構成:
独身
コレクター-エミッター電圧VCEOMax:
1200 V
コレクター-エミッター飽和電圧:
1.85 V
最大ゲートエミッタ電圧:
20 V
25℃での連続コレクタ電流:
16 A
Pd-消費電力:
167 W
最低動作温度:
- 55 C
最高作動温度:
+ 175 C
シリーズ:
STGW8M120DF3
包装:
チューブ
ブランド:
STMicroelectronics
ゲートエミッタリーク電流:
250 uA
製品タイプ:
IGBTトランジスタ
ファクトリーパックの数量:
600
サブカテゴリ:
IGBT
単位重量:
0.211644 oz
Tags
STGW8, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
***ical
Trans IGBT Chip N-CH 1200V 16A 167000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1200V, 16A, TO-247-3; DC Collector Current: 16A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 167W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
STM 650V M Series Trench Gate Field-Stop IGBTs
STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. The 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. They have an optimized design and are available in a tailored built-in anti-parallel diode.
モデル メーカー 説明 ストック 価格
STGW8M120DF3
DISTI # V99:2348_18695401
STMicroelectronicsTrench gate field-stop IGBT, M series 1200 V, 8 A low-loss600
  • 500:$1.9830
  • 250:$2.2340
  • 100:$2.3730
  • 10:$2.7670
  • 1:$3.6047
STGW8M120DF3
DISTI # 497-17619-ND
STMicroelectronicsTRENCH GATE FIELD-STOP IGBT M SE
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 2520:$1.7500
  • 510:$2.1787
  • 120:$2.5594
  • 30:$2.9530
  • 10:$3.1240
  • 1:$3.4800
STGW8M120DF3
DISTI # 33130727
STMicroelectronicsTrench gate field-stop IGBT, M series 1200 V, 8 A low-loss600
  • 500:$1.9830
  • 250:$2.2340
  • 100:$2.3730
  • 10:$2.7670
  • 4:$3.6047
STGW8M120DF3
DISTI # STGW8M120DF3
STMicroelectronicsSTMSTGW8M120DF3 - Trays (Alt: STGW8M120DF3)
RoHS: Compliant
Min Qty: 600
Container: Tray
Americas - 0
  • 1800:$1.4900
  • 3000:$1.4900
  • 6000:$1.4900
  • 600:$1.5900
  • 1200:$1.5900
STGW8M120DF3
DISTI # STGW8M120DF3
STMicroelectronicsSTMSTGW8M120DF3 (Alt: STGW8M120DF3)
RoHS: Compliant
Min Qty: 30
Europe - 0
  • 300:€1.3900
  • 180:€1.4900
  • 120:€1.5900
  • 60:€1.6900
  • 30:€1.7900
STGW8M120DF3
DISTI # 38AC2424
STMicroelectronicsIGBT, SINGLE, 1.2KV, 16A, TO-247-3,DC Collector Current:16A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:167W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:175°CRoHS Compliant: Yes0
  • 500:$2.0900
  • 250:$2.3300
  • 100:$2.4500
  • 50:$2.5800
  • 25:$2.7100
  • 10:$2.8400
  • 1:$3.3300
STGW8M120DF3
DISTI # 511-STGW8M120DF3
STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
RoHS: Compliant
600
  • 1:$3.3000
  • 10:$2.8100
  • 100:$2.4300
  • 250:$2.3100
  • 500:$2.0700
STGW8M120DF3
DISTI # IGBT2611
STMicroelectronicsIGBT 1200V8A 1,85VTO-247Stock DE - 0Stock HK - 0Stock US - 0
  • 600:$1.8600
STGW8M120DF3
DISTI # 2797964
STMicroelectronicsIGBT, SINGLE, 1200V, 16A, TO-247-3
RoHS: Compliant
0
  • 2520:$2.8000
  • 1020:$2.9400
  • 510:$3.4900
  • 120:$4.3100
  • 30:$4.7300
  • 1:$5.8800
STGW8M120DF3
DISTI # 2797964
STMicroelectronicsIGBT, SINGLE, 1200V, 16A, TO-247-30
  • 500:£1.5200
  • 250:£1.6900
  • 100:£1.7800
  • 10:£2.0500
  • 1:£2.7300
画像 モデル 説明
STGW8M120DF3

Mfr.#: STGW8M120DF3

OMO.#: OMO-STGW8M120DF3

IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
STGW8M120DF3

Mfr.#: STGW8M120DF3

OMO.#: OMO-STGW8M120DF3-STMICROELECTRONICS

TRENCH GATE FIELD-STOP IGBT M SE
可用性
ストック:
598
注文中:
2581
数量を入力してください:
STGW8M120DF3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$3.30
$3.30
10
$2.81
$28.10
100
$2.43
$243.00
250
$2.31
$577.50
500
$2.07
$1 035.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
皮切りに
最新の製品
  • MDmesh™ M6 Series 600 V Power MOSFETs
    STMicroelectronics’ MDmesh M6 series power MOSFETs in PowerFLAT 5 mm x 6 mm high voltage packages have reduced switching loss and low gate input resistance.
  • LDCL015 Series
    STMicroelectronics' LDCL015 series are ultra-low drop, capless linear regulators with low noise and low current consumption.
  • VNI8200XP Monolithic 8-Channel Driver
    STMicroelectronics' monolithic octal driver IC has low supply current and integrated protection features that prevent against overload.
  • Ultra-Low Power Arm® Cortex®-M4 MCUs
    STMicroelectronics' ultra-low power Arm® Cortex®-M4 MCUs are available in low-pin-count-packages ranging from 32-pin LQFP to 64-pin BGA including 36-pin WLCSP.
  • Compare STGW8M120DF3
    STGW80H65DFB vs STGW80H65DFB4 vs STGW80H65FB
  • LSM303C e-compass Accelerometer
    STMicroelectronics' LSM303C accelerometers are tiny which helps to save board space. Used for advanced navigation and motion sensitive applications.
Top