SIHG11N80E-GE3

Name: Vishay - SIHG11N80E-GE3
Brand: Vishay
SKU: OMO-6075250
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SIHG11N80E-GE3
メーカー:: Vishay
説明:: MOSFET N-CH 800V 12A TO247AC
ライフサイクル:: メーカー新製品
データシート:: SIHG11N80E-GE3 データシート
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詳しくは:: SIHG11N80E-GE3 詳しくは

製品属性
属性値

Tags: SIHG1, SIHG, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHG11N80E-GE3 説明

***ical: Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-247AC

***et Europe: Transistor MOSFET N-CH 800V 12A 3-Pin TO-247AC

***i-Key: MOSFET N-CH 800V 12A TO247AC

***ark: Mosfet, N-Ch, 800V, 12A, 150Deg C, 179W; Transistor Polarity:n Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.38Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 800V, 12A, 150DEG C, 179W; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.38ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:179W; Transistor Case Style:TO-247AC; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:E Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CANALE N, 800V, 12A, 150°C, 179W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:12A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):0.38ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:179W; Modello Case Transistor:TO-247AC; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:E Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

SIHG11N80E-GE3 詳しくは

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

モデル	メーカー	説明	ストック	価格
SIHG11N80E-GE3 DISTI # V99:2348_21688013	Vishay Intertechnologies	SIHG11N80E-GE3	400	2500:$1.9600 1000:$2.0570 500:$2.3020 250:$2.6390 100:$2.7210 10:$3.3670 1:$4.4363
SIHG11N80E-GE3 DISTI # SIHG11N80E-GE3-ND	Vishay Siliconix	MOSFET N-CH 800V 12A TO247AC RoHS: Compliant Min Qty: 1 Container: Tube	500In Stock	5000:$1.9811 2500:$2.0584 500:$2.5692 100:$3.0180 25:$3.4824 10:$3.6840 1:$4.1000
SIHG11N80E-GE3 DISTI # 31926983	Vishay Intertechnologies	SIHG11N80E-GE3	400	2500:$1.9600 1000:$2.0570 500:$2.3020 250:$2.6390 100:$2.7210 10:$3.3670 4:$4.4363
SIHG11N80E-GE3 DISTI # SIHG11N80E-GE3	Vishay Intertechnologies	Transistor MOSFET N-CH 800V 12A 3-Pin TO-247AC (Alt: SIHG11N80E-GE3) RoHS: Compliant Min Qty: 1	Europe - 0	1000:€2.3900 500:€2.4900 50:€2.5900 100:€2.5900 25:€2.8900 10:€3.4900 1:€4.4900
SIHG11N80E-GE3 DISTI # 78AC6521	Vishay Intertechnologies	MOSFET, N-CH, 800V, 12A, 150DEG C, 179W,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.38ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes	989	500:$2.4600 100:$2.8400 50:$3.0400 25:$3.2500 10:$3.4500 1:$4.1600
SIHG11N80E-GE3 DISTI # 78-SIHG11N80E-GE3	Vishay Intertechnologies	MOSFET 800V Vds 30V Vgs TO-247AC RoHS: Compliant	508	1:$4.1200 10:$3.4200 100:$2.8100 250:$2.7200 500:$2.4400
SIHG11N80E-GE3 DISTI # 2932926	Vishay Intertechnologies	MOSFET, N-CH, 800V, 12A, 150DEG C, 179W RoHS: Compliant	989	1000:$4.7000 500:$4.9700 250:$5.2700 100:$5.7500 10:$6.6300 1:$7.6000
SIHG11N80E-GE3 DISTI # 2932926	Vishay Intertechnologies	MOSFET, N-CH, 800V, 12A, 150DEG C, 179W	989	500:£2.1000 250:£2.1200 100:£2.1800 10:£2.6600 1:£3.5900

SIHG11N80E-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes