IPD70R950CEAUMA1

Mfr. #:: IPD70R950CEAUMA1
メーカー:: Infineon Technologies
説明:: MOSFET CONSUMER
ライフサイクル:: メーカー新製品
データシート:: IPD70R950CEAUMA1 データシート
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詳しくは:: IPD70R950CEAUMA1 詳しくは

製品属性
属性値

メーカー：: インフィニオン

製品カテゴリ：: MOSFET

JBoss：: Y

テクノロジー：: Si

取り付けスタイル：: SMD / SMT

パッケージ/ケース：: TO-252-3

Vds-ドレイン-ソース間降伏電圧：: 700 V

商標名：: CoolMOS

包装：: リール

高さ：: 2.3 mm

長さ：: 6.5 mm

シリーズ：: CoolMOS CE

幅：: 6.22 mm

ブランド：: インフィニオンテクノロジーズ

感湿性：: はい

製品タイプ：: MOSFET

ファクトリーパックの数量：: 2500

サブカテゴリ：: MOSFET

パーツ番号エイリアス：: IPD70R950CE SP001466970

単位重量：: 0.011993 oz

Tags: IPD70R9, IPD70R, IPD70, IPD7, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD70R950CEAUMA1 説明

***et: Transistor MOSFET N-CH 750V 7.4A 3-Pin TO-252 T/R

***ark: Mosfet, N-Ch, 700V, 7.4A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:7.4A; Drain Source Voltage Vds:700V; On Resistance Rds(On):0.86Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: CoolMOS CE is a technology platform of Infineons market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. With the extended family, Infineon offers 600V, 650V and 700V devices targeting low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications. | Summary of Features: Thermal behavior; 90C on device, open case; 50C/70C close case temperature; EMI within EN55022B standard; Ease of use and fast design-in | Benefits: Low conduction losses from large margin between R DS(on) typical to nominal; Low switching losses from optimized output capacitance (E oss); Optimized EMI to balance switching speed and EMI behavior; Good controllability given the integrated R g | Target Applications: Low power chargers; Adapters; PC silverbox; LCD TV; LED retrofit; LED drivers

***ical: Trans MOSFET N-CH 650V 7.2A 3-Pin(2+Tab) DPAK T/R

***ark: Mosfet, N-Ch, 650V, 7.2A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:7.2A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.86Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

***ical: Trans MOSFET N-CH 600V 5.7A 3-Pin(2+Tab) DPAK T/R

***ineon SCT: CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS

***ineon: CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***icroelectronics: N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in DPAK package

***ical: Trans MOSFET N-CH 650V 5.5A 3-Pin(2+Tab) DPAK T/R

***el Electronic: IC REG LIN 1.5V 3A DDPAK/TO263-5

***r Electronics: Power Field-Effect Transistor, 5.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***emi: Power MOSFET 600V 5.9A 900mOhm Single N-Channel DPAK

***ical: Trans MOSFET N-CH 600V 5.7A 3-Pin(2+Tab) DPAK T/R

***ark: REEL / NFET DPAK 600V 5.9A 900

***ical: Trans MOSFET N-CH 700V 5.4A 3-Pin(2+Tab) DPAK T/R

***nell: MOSFET, N-CH, 700V, 5.4A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.4A; Drain Source Voltage Vds: 700V; On Resistance Rds(on): 1.26ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 53W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS CE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: CoolMOS CE is a technology platform of Infineons market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. With the extended family, Infineon offers 600V, 650V and 700V devices targeting low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications. | Summary of Features: Thermal behavior; 90C on device, open case; 50C/70C close case temperature; EMI within EN55022B standard; Ease of use and fast design-in | Benefits: Low conduction losses from large margin between R DS(on) typical to nominal; Low switching losses from optimized output capacitance (E oss); Optimized EMI to balance switching speed and EMI behavior; Good controllability given the integrated R g | Target Applications: Low power chargers; Adapters; PC silverbox; LCD TV; LED retrofit; LED drivers

IPD70R950CEAUMA1 詳しくは

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ CE Power MOSFETs: Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.

Market price

モデル	メーカー	説明	ストック	価格
IPD70R950CEAUMA1 DISTI # 33356366	Infineon Technologies AG	Trans MOSFET N-CH 700V 7.4A T/R RoHS: Compliant	2500	2500:$0.2450
IPD70R950CEAUMA1 DISTI # IPD70R950CEAUMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 700V 7.4A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1294In Stock	1000:$0.3385 500:$0.4231 100:$0.5352 10:$0.6980 1:$0.7900
IPD70R950CEAUMA1 DISTI # IPD70R950CEAUMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 700V 7.4A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1294In Stock	1000:$0.3385 500:$0.4231 100:$0.5352 10:$0.6980 1:$0.7900
IPD70R950CEAUMA1 DISTI # IPD70R950CEAUMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 700V 7.4A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	25000:$0.2601 12500:$0.2670 5000:$0.2773 2500:$0.2978
IPD70R950CEAUMA1 DISTI # V36:1790_13979503	Infineon Technologies AG	Trans MOSFET N-CH 700V 7.4A T/R RoHS: Compliant	0	2500000:$0.2278 1250000:$0.2281 250000:$0.2510 25000:$0.2911 2500:$0.2978
IPD70R950CEAUMA1 DISTI # IPD70R950CEAUMA1	Infineon Technologies AG	Trans MOSFET N-CH 750V 7.4A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD70R950CEAUMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.2479 15000:$0.2529 10000:$0.2609 5000:$0.2709 2500:$0.2809
IPD70R950CEAUMA1 DISTI # SP001466970	Infineon Technologies AG	Transistor MOSFET N-CH 750V 7.4A 3-Pin TO-252 T/R (Alt: SP001466970) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.2319 15000:€0.2499 10000:€0.2709 5000:€0.2959 2500:€0.3619
IPD70R950CEAUMA1 DISTI # 16AC3359	Infineon Technologies AG	MOSFET, N-CH, 700V, 7.4A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:7.4A,Drain Source Voltage Vds:700V,On Resistance Rds(on):0.86ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	0	1000:$0.3160 500:$0.3430 250:$0.3690 100:$0.3960 50:$0.4680 25:$0.5410 10:$0.6130 1:$0.7370
IPD70R950CEAUMA1 DISTI # 726-IPD70R950CEAUMA1	Infineon Technologies AG	MOSFET CONSUMER RoHS: Compliant	0	1:$0.7300 10:$0.6070 100:$0.3920 1000:$0.3130
IPD70R950CEAUMA1 DISTI # 2750413	Infineon Technologies AG	MOSFET, N-CH, 700V, 7.4A, TO-252 RoHS: Compliant	0	1000:$0.5110 500:$0.6380 100:$0.8070 10:$1.0600 1:$1.1900
IPD70R950CEAUMA1 DISTI # 2750413	Infineon Technologies AG	MOSFET, N-CH, 700V, 7.4A, TO-252	0	500:£0.2610 250:£0.2820 100:£0.3020 10:£0.5160 1:£0.6430

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IPD70R950CEAUMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes