 | | | |
| PartNumber | IPD70N03S4L-04 | IPD70N03S4L04ATMA1 | IPD70N04S3-07 |
| Description | MOSFET N-Ch 30V 70A DPAK-2 OptiMOS-T2 | MOSFET N-Ch 30V 70A DPAK-2 OptiMOS-T2 | MOSFET N-Ch 40V 70A DPAK-2 OptiMOS-T |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 40 V |
| Id Continuous Drain Current | 70 A | 70 A | 70 A |
| Rds On Drain Source Resistance | 3.6 mOhms | 3.6 mOhms | 6.8 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | - |
| Vgs Gate Source Voltage | 16 V | 16 V | 20 V |
| Qg Gate Charge | 48 nC | 48 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 68 W | 68 W | 79 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Tradename | OptiMOS | - | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm | 6.5 mm |
| Series | OptiMOS-T2 | XPD70N03 | OptiMOS-T |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 5 ns | 5 ns | 7 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 5 ns | 5 ns | 8 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 27 ns | 27 ns | 17 ns |
| Typical Turn On Delay Time | 7 ns | 7 ns | 13 ns |
| Part # Aliases | IPD70N03S4L04ATMA1 IPD7N3S4L4XT SP000274986 | IPD70N03S4L-04 IPD7N3S4L4XT SP000274986 | IPD70N04S307ATMA1 IPD70N04S307XT SP000261221 |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD70R360P7SAUMA1 | MOSFET | |
| IPD70R600P7SAUMA1 | MOSFET | ||
| IPD70N10S3-12 | MOSFET N-Ch 100V 70A DPAK-2 OptiMOS-T | ||
| IPD70N10S3L-12 | MOSFET N-Ch 100V 70A DPAK-2 OptiMOS-T | ||
| IPD70N03S4L-04 | MOSFET N-Ch 30V 70A DPAK-2 OptiMOS-T2 | ||
| IPD70P04P4L-08 | MOSFET P-Ch -40V -70A DPAK-2 OptiMOS-P2 | ||
| IPD70P04P4-09 | MOSFET P-Ch -40V -73A DPAK-2 OptiMOS-P2 | ||
| IPD70N03S4L04ATMA1 | MOSFET N-Ch 30V 70A DPAK-2 OptiMOS-T2 | ||
| IPD70N12S311ATMA1 | MOSFET MOSFET_(120V,300V) | ||
| IPD70N12S3L12ATMA1 | MOSFET N-CHANNEL 100+ | ||
| IPD70R600CEAUMA1 | MOSFET CONSUMER | ||
| IPD70P04P4L08ATMA1 | MOSFET P-CH TO252-3 | ||
| IPD70N10S3L12ATMA1 | MOSFET N-CH 100V 70A TO252-3 | ||
| IPD70P04P409ATMA1 | MOSFET P-CH TO252-3 | ||
| IPD70N12S311ATMA1 | MOSFET N-CH 120V 70A TO252-3 | ||
| IPD70R1K4CEAUMA1 | MOSFET N-CH 700V 5.4A TO252-3 | ||
| IPD70R360P7SAUMA1 | MOSFET N-CH 700V 12.5A TO252-3 | ||
| IPD70R600CEAUMA1 | MOSFET N-CH TO252-3 | ||
| IPD70N03S4L04ATMA1 | MOSFET N-CH 30V 70A TO252-3 | ||
| IPD70N10S312ATMA1 | MOSFET N-CH 100V 70A TO252-3 | ||
| IPD70N12S3L12ATMA1 | MOSFET N-CHANNEL_100+ | ||
| IPD70R1K4P7SAUMA1 | MOSFET N-CH 700V 4A TO252-3 | ||
| IPD70R2K0CEAUMA1 | MOSFET N-CH TO252-3 | ||
| IPD70R600P7SAUMA1 | MOSFET N-CH 700V 8.5A TO252-3 | ||
| IPD70N04S3-07 | MOSFET N-Ch 40V 70A DPAK-2 OptiMOS-T | ||
Infineon Technologies |
IPD70R1K4P7SAUMA1 | MOSFET | |
| IPD70N10S3L12ATMA1 | MOSFET N-CHANNEL_100+ | ||
| IPD70N04S3-07 | MOSFET N-Ch 40V 70A DPAK-2 OptiMOS-T | ||
| IPD70P04P409ATMA1 | MOSFET P-CHANNEL | ||
| IPD70R1K4P7SAUMA1-CUT TAPE | New and Original | ||
| IPD70R360P7SAUMA1-CUT TAPE | New and Original | ||
| IPD70F3102GJ-A33 | New and Original | ||
| IPD70N03S3-07 | New and Original | ||
| IPD70N03S4L-04 | MOSFET N-Ch 30V 70A DPAK-2 OptiMOS-T2 | ||
| IPD70N03S4L-04 4N03L04 | New and Original | ||
| IPD70N03S4L04XT | New and Original | ||
| IPD70N04S307ATMA1 | Power Field-Effect Transistor, 82A I(D), 40V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252 | ||
| IPD70N10L | New and Original | ||
| IPD70N10S3-12 | MOSFET N-Ch 100V 70A DPAK-2 OptiMOS-T | ||
| IPD70N10S3-12 QN1012 | New and Original | ||
| IPD70N10S312 | New and Original | ||
| IPD70N12S3-11 | - Bulk (Alt: IPD70N12S3-11) | ||
| IPD70R1K4CE | N-CH 700V 5,4A 1400mOhm TO252 | ||
| IPD70R360P7S | New and Original | ||
| IPD70R600CE | N-CH 700V 10,5A 600mOhm DPAK | ||
| IPD70R600CE. | New and Original | ||
| IPD70R600P7S | New and Original | ||
| IPD70P04P4L-08 | IGBT Transistors MOSFET P-Ch -40V -70A DPAK-2 OptiMOS-P2 | ||
| IPD70N10S3L-12 | IGBT Transistors MOSFET N-Ch 100V 70A DPAK-2 OptiMOS-T | ||
| IPD70P04P4-09 | RF Bipolar Transistors MOSFET P-Ch -40V -73A DPAK-2 OptiMOS-P2 |