 |  |  | |
| PartNumber | 2N2222Ae3 | 2N2222Ae3/TR | 2N2222Ae4 |
| Description | Bipolar Transistors - BJT BJTs | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | N |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-18-3 | TO-206AA-3 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 50 V | 50 V | - |
| Collector Base Voltage VCBO | 75 V | 75 V | - |
| Emitter Base Voltage VEBO | 6 V | 6 V | - |
| Collector Emitter Saturation Voltage | 1 V | 0.3 V | - |
| Maximum DC Collector Current | 800 mA | 800 mA | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 200 C | + 200 C | - |
| Packaging | Foil Bag | Reel | Bulk |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Continuous Collector Current | 800 mA | - | - |
| DC Collector/Base Gain hfe Min | 30 | 30 at 500 mA, 10 V | - |
| Pd Power Dissipation | 500 mW | 0.5 W | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 100 | 1 |
| Subcategory | Transistors | Transistors | Transistors |
| DC Current Gain hFE Max | - | 325 at 1 mA, 10 V | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Microchip / Microsemi |
2N2222Ae3 | Bipolar Transistors - BJT BJTs | |
| 2N2222Ae3/TR | Bipolar Transistors - BJT | ||
| 2N2222Ae4 | Bipolar Transistors - BJT | ||
| 2N2222Ae4/TR | Bipolar Transistors - BJT | ||
| 2N2222Ae4 | Bipolar Transistors - BJT | ||
| 2N2222Ae3 | Bipolar Transistors - BJT | ||
| 2N2222Ae3/TR | Bipolar Transistors - BJT |