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| PartNumber | 2SA1179N6-CPA-TB-E | 2SA1179N6-TB-E |
| Description | Bipolar Transistors - Pre-Biased BIP PNP 0.15A 50V | Bipolar Transistors - BJT BIP PNP 0.15A 50V |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Transistor Polarity | NPN, PNP | PNP |
| Mounting Style | SMD/SMT | SMD/SMT |
| DC Collector/Base Gain hfe Min | 200 | - |
| Collector Emitter Voltage VCEO Max | 50 V | - 50 V |
| Continuous Collector Current | 150 mA | - 150 mA |
| Pd Power Dissipation | 200 mW | 200 mW |
| Packaging | Reel | Reel |
| Brand | ON Semiconductor | ON Semiconductor |
| Number of Channels | 2 Channel | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | Transistors | Transistors |
| Package / Case | - | SC-59-3 |
| Configuration | - | Single |
| Collector Base Voltage VCBO | - | - 55 V |
| Emitter Base Voltage VEBO | - | - 5 V |
| Collector Emitter Saturation Voltage | - | - 0.15 V |
| Maximum DC Collector Current | - | - 300 mA |
| Gain Bandwidth Product fT | - | 180 MHz |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Series | - | 2SA1179N |
| DC Current Gain hFE Max | - | 600 |
| Unit Weight | - | 0.000282 oz |