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| PartNumber | 2SA1962-O | 2SA1962-O(Q,T) | 2SA1962-O(Q) |
| Description | Bipolar Transistors - BJT Transistor PNP 230V 15A | Bipolar Transistors - BJT PNP 230V 15A | |
| Manufacturer | - | - | Toshiba Semiconductor and Storage |
| Product Category | - | - | Transistors (BJT) - Single, Pre-Biased |
| Series | - | - | - |
| Packaging | - | - | Tube |
| Unit Weight | - | - | 0.238311 oz |
| Mounting Style | - | - | Through Hole |
| Package Case | - | - | TO-3P-3, SC-65-3 |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-3P(N) |
| Configuration | - | - | Single |
| Power Max | - | - | 130W |
| Transistor Type | - | - | PNP |
| Current Collector Ic Max | - | - | 15A |
| Voltage Collector Emitter Breakdown Max | - | - | 230V |
| DC Current Gain hFE Min Ic Vce | - | - | 80 @ 1A, 5V |
| Vce Saturation Max Ib Ic | - | - | 3V @ 800mA, 8A |
| Current Collector Cutoff Max | - | - | 5μA (ICBO) |
| Frequency Transition | - | - | 30MHz |
| Pd Power Dissipation | - | - | 130 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Collector Emitter Voltage VCEO Max | - | - | - 230 V |
| Transistor Polarity | - | - | PNP |
| Collector Emitter Saturation Voltage | - | - | - 1.5 V |
| Collector Base Voltage VCBO | - | - | - 230 V |
| Emitter Base Voltage VEBO | - | - | - 5 V |
| Maximum DC Collector Current | - | - | - 15 A |
| Gain Bandwidth Product fT | - | - | 30 MHz |
| Continuous Collector Current | - | - | - 15 A |
| DC Collector Base Gain hfe Min | - | - | 55 |
| DC Current Gain hFE Max | - | - | 160 |