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| PartNumber | 2SC3325-O(TE85L,F) | 2SC3325-O | 2SC3325-O(TE85LF)CT-ND |
| Description | Bipolar Transistors - BJT S-MINI PLN (LF) TRANSISTOR Pd=200mW F=1MHz | ||
| Manufacturer | Toshiba | Toshiba Semiconductor and Storage | - |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single, Pre-Biased | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-59-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | 50 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 0.1 V | - | - |
| Maximum DC Collector Current | 500 mA | - | - |
| Gain Bandwidth Product fT | 300 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 240 | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Brand | Toshiba | - | - |
| Continuous Collector Current | 500 mA | - | - |
| DC Collector/Base Gain hfe Min | 70 | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Series | - | - | - |
| Package Case | - | TO-236-3, SC-59, SOT-23-3 | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | S-Mini | - |
| Power Max | - | 200mW | - |
| Transistor Type | - | NPN | - |
| Current Collector Ic Max | - | 500mA | - |
| Voltage Collector Emitter Breakdown Max | - | 50V | - |
| DC Current Gain hFE Min Ic Vce | - | 70 @ 100mA, 1V | - |
| Vce Saturation Max Ib Ic | - | 250mV @ 10mA, 100mA | - |
| Current Collector Cutoff Max | - | 100nA (ICBO) | - |
| Frequency Transition | - | 300MHz | - |