2SC3325-O

2SC3325-O(TE85L,F) vs 2SC3325-O vs 2SC3325-O(TE85LF)CT-ND

 
PartNumber2SC3325-O(TE85L,F)2SC3325-O2SC3325-O(TE85LF)CT-ND
DescriptionBipolar Transistors - BJT S-MINI PLN (LF) TRANSISTOR Pd=200mW F=1MHz
ManufacturerToshibaToshiba Semiconductor and Storage-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single, Pre-Biased-
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSC-59-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max50 V--
Collector Base Voltage VCBO50 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage0.1 V--
Maximum DC Collector Current500 mA--
Gain Bandwidth Product fT300 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max240--
PackagingReelDigi-ReelR Alternate Packaging-
BrandToshiba--
Continuous Collector Current500 mA--
DC Collector/Base Gain hfe Min70--
Pd Power Dissipation200 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Series---
Package Case-TO-236-3, SC-59, SOT-23-3-
Mounting Type-Surface Mount-
Supplier Device Package-S-Mini-
Power Max-200mW-
Transistor Type-NPN-
Current Collector Ic Max-500mA-
Voltage Collector Emitter Breakdown Max-50V-
DC Current Gain hFE Min Ic Vce-70 @ 100mA, 1V-
Vce Saturation Max Ib Ic-250mV @ 10mA, 100mA-
Current Collector Cutoff Max-100nA (ICBO)-
Frequency Transition-300MHz-
Manufacturer Part # Description RFQ
Toshiba
Toshiba
2SC3325-O(TE85L,F) Bipolar Transistors - BJT S-MINI PLN (LF) TRANSISTOR Pd=200mW F=1MHz
2SC3325-O New and Original
2SC3325-O(TE85LF)CT-ND New and Original
2SC3325-O(TE85LF)DKR-ND New and Original
2SC3325-O(TE85LF)TR-ND New and Original
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