 | | | |
| PartNumber | 2SC5712(TE12L,F) | 2SC5712 | 2SC5712 , MDB10SV |
| Description | Bipolar Transistors - BJT NPN 100V VCBO 50V VCEO 3A IC | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | Through Hole | - | - |
| Transistor Polarity | NPN | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | 100 V | - | - |
| Emitter Base Voltage VEBO | 7 V | - | - |
| Collector Emitter Saturation Voltage | 0.14 V | - | - |
| Maximum DC Collector Current | 3 A | - | - |
| Series | 2SC5712 | - | - |
| Packaging | Reel | - | - |
| Brand | Toshiba | - | - |
| Continuous Collector Current | 0.3 A | - | - |
| DC Collector/Base Gain hfe Min | 400 | - | - |
| Pd Power Dissipation | 1 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
2SC5712(TE12L,F) | Bipolar Transistors - BJT NPN 100V VCBO 50V VCEO 3A IC | |
| 2SC5712(TE12L,F) | Bipolar Transistors - BJT NPN 100V VCBO 50V VCEO 3A IC | ||
| 2SC5712 | New and Original | ||
| 2SC5712 , MDB10SV | New and Original |