 |  | | |
| PartNumber | 2SC5810(TE12L,F) | 2SC5810 | 2SC5810(TE12L |
| Description | Bipolar Transistors - BJT Power Trans 100V 0.17V Vce 85ns | ||
| Manufacturer | Toshiba | TOSHIBA | TOSHIBA |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | Transistors (BJT) - Single |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-62-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | 100 V | - | - |
| Emitter Base Voltage VEBO | 7 V | - | - |
| Collector Emitter Saturation Voltage | 0.17 V | - | - |
| Maximum DC Collector Current | 1 A | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | 2SC5810 | - | - |
| Packaging | Reel | - | - |
| Brand | Toshiba | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
2SC5810(TE12L,F) | Bipolar Transistors - BJT Power Trans 100V 0.17V Vce 85ns | |
| 2SC5810(TE12L,F) | Bipolar Transistors - BJT Power Trans 100V 0.17V Vce 85ns | ||
| 2SC5810 | New and Original | ||
| 2SC5810(TE12L | New and Original | ||
| 2SC5812 | New and Original | ||
| 2SC5814 | New and Original | ||
| 2SC5814-R | New and Original | ||
| 2SC5814-T112-1R | New and Original | ||
| 2SC5814-T12-1R | New and Original | ||
| 2SC5814-T12-1R , RF101L4 | New and Original | ||
| 2SC5814-T12-1S | New and Original | ||
| 2SC5814-T1R-1R | New and Original | ||
| 2SC5815-T111-1R,BSL211SP | New and Original | ||
| 2SC5815-T111-1R,BSP19AT1 | New and Original | ||
| 2SC5819 | New and Original |