 |  | | |
| PartNumber | 2SK2009TE85LF | 2SK2009TE85LFCT-ND | 2SK2009TE85LFDKR-ND |
| Description | MOSFET N-Ch Sm Sig FET Id 0.2A 30V 20V | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-346-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 200 mA | - | - |
| Rds On Drain Source Resistance | 2 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 500 mV | - | - |
| Vgs Gate Source Voltage | 2.5 V | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.1 mm | - | - |
| Length | 2.9 mm | - | - |
| Series | 2SK2009 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | RF Small Signal MOSFET | - | - |
| Width | 1.5 mm | - | - |
| Brand | Toshiba | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 0.12 us | - | - |
| Typical Turn On Delay Time | 0.06 us | - | - |
| Unit Weight | 0.000423 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
2SK2009TE85LF | MOSFET N-Ch Sm Sig FET Id 0.2A 30V 20V | |
| 2SK2009TE85LF | RF MOSFET Transistors N-Ch Sm Sig FET Id 0.2A 30V 20V | ||
| 2SK2009TE85LFCT-ND | New and Original | ||
| 2SK2009TE85LFDKR-ND | New and Original | ||
| 2SK2009TE85LFTR-ND | New and Original |