2SK3557

2SK3557-6-TB-E vs 2SK3557 vs 2SK3557-6-TB-E , MAX6346

 
PartNumber2SK3557-6-TB-E2SK35572SK3557-6-TB-E , MAX6346
DescriptionRF JFET Transistors LOW-FREQUENCY AMPLIFIER
ManufacturerON Semiconductor--
Product CategoryRF JFET Transistors--
RoHSY--
Transistor TypeJFET--
TechnologySi--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage15 V--
Vgs Gate Source Breakdown Voltage- 15 V--
Id Continuous Drain Current50 mA--
Maximum Drain Gate Voltage- 15 V--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation200 mW--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
PackagingReel--
ConfigurationSingle--
ProductRF JFET--
Series2SK3557--
TypeJFET--
BrandON Semiconductor--
Forward Transconductance Min35 mS--
Gate Source Cutoff Voltage- 0.7 V--
Product TypeRF JFET Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
Manufacturer Part # Description RFQ
2SK3557-7-TB-E JFET LOW-FREQUENCY AMPLIFIER
2SK3557-6-TB-E RF JFET Transistors LOW-FREQUENCY AMPLIFIER
2SK3557 New and Original
2SK3557-6-TB-E , MAX6346 New and Original
2SK3557-6-TB-E,LM3Z6V2T1 New and Original
2SK3557-7-TB-E , MAX6405 New and Original
2SK3557-6-TB-EX - Bulk (Alt: 2SK3557-6-TB-EX)
ON Semiconductor
ON Semiconductor
2SK3557-7-TB-E New and Original
2SK3557-6-TB-E RF JFET Transistors LOW-FREQUENCY AMPLIFIER
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