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| PartNumber | A2T21H360-24SR6 | A2T21H360-23NR6 |
| Description | RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 63 W Avg., 28 V | RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2200 MHz, 63 W Avg., 28 V |
| Manufacturer | NXP | NXP |
| Product Category | RF MOSFET Transistors | RF MOSFET Transistors |
| RoHS | Y | Y |
| Technology | Si | Si |
| Packaging | Reel | Reel |
| Brand | NXP / Freescale | NXP Semiconductors |
| Product Type | RF MOSFET Transistors | RF MOSFET Transistors |
| Factory Pack Quantity | 150 | 150 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | 935318247128 | 935322358528 |
| Unit Weight | 0.303504 oz | 0.186807 oz |
| Transistor Polarity | - | Dual N-Channel |
| Id Continuous Drain Current | - | 2.4 A |
| Vds Drain Source Breakdown Voltage | - | - 500 mV, 5 V |
| Gain | - | 16.8 dB |
| Output Power | - | 63 W |
| Minimum Operating Temperature | - | - 40 C |
| Maximum Operating Temperature | - | + 150 C |
| Mounting Style | - | SMD/SMT |
| Package / Case | - | OM-1230-4 |
| Operating Frequency | - | 2110 MHz to 2200 MHz |
| Type | - | RF Power MOSFET |
| Number of Channels | - | 2 Channel |
| Moisture Sensitive | - | Yes |
| Vgs Gate Source Voltage | - | - 6 V, 10 V |
| Vgs th Gate Source Threshold Voltage | - | 0.8 V |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
NXP / Freescale |
A2T21H360-24SR6 | RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 63 W Avg., 28 V | |
NXP Semiconductors |
A2T21H360-23NR6 | RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2200 MHz, 63 W Avg., 28 V | |
| A2T21H360-24SR6 | IC TRANS RF LDMOS | ||
| A2T21H360-23NR6 | RF TRANS 2.1GHZ 360W OM1230-4L2S | ||
| A2T21H360-23N | New and Original |