A2T21H4 stock, A2T21H4, A2T21H410-24SR6


PartNumber	A2T21H410-24SR6	A2T21H450W19SR6
Description	RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 28 W Avg, 28 V	RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2200 MHz, 89 W Avg., 30 V
Manufacturer	NXP	NXP
Product Category	RF MOSFET Transistors	RF MOSFET Transistors
Transistor Polarity	N-Channel	-
Technology	Si	Si
Id Continuous Drain Current	1.6 A, 2.7 A	-
Vds Drain Source Breakdown Voltage	- 500 mV, 65 V	-
Gain	15.6 dB	-
Output Power	72 W	-
Minimum Operating Temperature	- 40 C	-
Maximum Operating Temperature	+ 150 C	-
Mounting Style	SMD/SMT	-
Package / Case	NI-1230S-4L2L-6	-
Packaging	Reel	Reel
Operating Frequency	2.11 GHz to 2.17 GHz	-
Type	RF Power MOSFET	-
Brand	NXP / Freescale	NXP / Freescale
Number of Channels	2 Channel	-
Product Type	RF MOSFET Transistors	RF MOSFET Transistors
Factory Pack Quantity	150	150
Subcategory	MOSFETs	MOSFETs
Vgs Gate Source Voltage	- 6 V, 10 V	-
Vgs th Gate Source Threshold Voltage	1.2 V	-
Part # Aliases	935312756128	935323762128
Unit Weight	0.303504 oz	0.178310 oz

Search Part Number : "A2T21H4", Match & Start with "A2T21H4" - Total : 5

Manufacturer	Part #	Description
NXP / Freescale	A2T21H410-24SR6	RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 28 W Avg, 28 V
NXP / Freescale	A2T21H450W19SR6	RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2200 MHz, 89 W Avg., 30 V
NXP Semiconductors	A2T21H410-24SR6	RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2170 MHz, 28 W Avg, 28 V
NXP Semiconductors	A2T21H450W19SR6	2.1GHZ 450W NI1230S-4S4S
	A2T21H410-24S	New and Original

A2T21H4