| PartNumber | APL502J | APL502LG | APL502B2G |
| Description | Discrete Semiconductor Modules Power MOSFET - Linear | MOSFET FG, MOSFET, 500V, 0.12_OHM,TO-264, RoHS | MOSFET FG, MOSFET, 500V, TO-247 T-MAX, RoHS |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Product | Power MOSFET Modules | - | - |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Mounting Style | Screw Mount | Through Hole | Through Hole |
| Package / Case | SOT-227-4 | TO-264-3 | T-MAX-3 |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Packaging | Tube | Tube | Tube |
| Configuration | Single | - | Single |
| Height | 9.6 mm | 5.21 mm | 5.31 mm |
| Length | 38.2 mm | 26.49 mm | 21.46 mm |
| Width | 25.4 mm | 20.5 mm | 16.26 mm |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Fall Time | 14 ns | 16 ns | 16 ns |
| Id Continuous Drain Current | 52 A | 58 A | 58 A |
| Pd Power Dissipation | 568 W | 730 W | 730 W |
| Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
| Rds On Drain Source Resistance | 90 mOhms | 90 mOhms | 90 mOhms |
| Rise Time | 24 ns | 27 ns | 27 ns |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
| Tradename | ISOTOP | - | - |
| Typical Turn Off Delay Time | 58 ns | 56 ns | 56 ns |
| Typical Turn On Delay Time | 13 ns | 13 ns | 13 ns |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V | 500 V |
| Vgs th Gate Source Threshold Voltage | 2 V | 4 V | 4 V |
| Unit Weight | 1.015890 oz | 0.373904 oz | - |
| Technology | - | Si | Si |
| Channel Mode | - | Enhancement | Enhancement |
| Transistor Type | - | - | 1 N-Channel |