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| PartNumber | APT100GT60JR | APT100GT60JRDQ4 | APT100GT60B2RG |
| Description | IGBT Modules FG, IGBT, 600V, 100A, SOT-227 | IGBT Modules FG, IGBT-COMBI, 600V,100A, SOT-227 | IGBT Transistors FG, IGBT, 600V, TO-247 T-MAX, RoHS |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Transistors |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Carbide Modules | IGBT Silicon Carbide Modules | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V | - |
| Collector Emitter Saturation Voltage | 2.1 V | 2.1 V | - |
| Continuous Collector Current at 25 C | 148 A | 148 A | - |
| Gate Emitter Leakage Current | 300 nA | 300 nA | - |
| Pd Power Dissipation | 500 W | 500 W | - |
| Package / Case | ISOTOP-4 | ISOTOP-4 | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Packaging | Tube | Tube | Tube |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Maximum Gate Emitter Voltage | 30 V | 30 V | - |
| Product Type | IGBT Modules | IGBT Modules | IGBT Transistors |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Technology | - | - | Si |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APT100GT60JR | IGBT Modules FG, IGBT, 600V, 100A, SOT-227 | |
| APT100GT60JRDQ4 | IGBT Modules FG, IGBT-COMBI, 600V,100A, SOT-227 | ||
| APT100GT60B2RG | IGBT Transistors FG, IGBT, 600V, TO-247 T-MAX, RoHS | ||
| APT100GT60JRDQ4 | Trans IGBT Chip N-CH 600V 148A 4-Pin SOT-227 | ||
| APT100GT60JR | Trans IGBT Chip N-CH 600V 148A 4-Pin SOT-227 | ||
| APT100GT60LRG | New and Original |