![]() | |||
| PartNumber | APT25GR120B | APT25GR120BSCD10 | APT25GR120BD15 |
| Description | IGBT Transistors FG, IGBT, 1200V, 25A, TO247 | IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8 | IGBT Transistors |
| Manufacturer | Microchip | Microchip | Microsemi Corporation |
| Product Category | IGBT Transistors | IGBT Transistors | IGBTs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Packaging | Tube | Tube | Tube |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 1 | 1 | - |
| Subcategory | IGBTs | IGBTs | - |
| Series | - | - | - |
| Unit Weight | - | - | 1.340411 oz |
| Mounting Style | - | - | Through Hole |
| Tradename | - | - | Ultra Fast NPT-IGBT |
| Package Case | - | - | TO-247-3 |
| Input Type | - | - | Standard |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-247 |
| Configuration | - | - | Single |
| Power Max | - | - | 521W |
| Reverse Recovery Time trr | - | - | - |
| Current Collector Ic Max | - | - | 75A |
| Voltage Collector Emitter Breakdown Max | - | - | 1200V |
| IGBT Type | - | - | NPT |
| Current Collector Pulsed Icm | - | - | 100A |
| Vce on Max Vge Ic | - | - | 3.2V @ 15V, 25A |
| Switching Energy | - | - | 742μJ (on), 427μJ (off) |
| Gate Charge | - | - | 203nC |
| Td on off 25°C | - | - | 16ns/122ns |
| Test Condition | - | - | 600V, 25A, 4.3 Ohm, 15V |
| Pd Power Dissipation | - | - | 521 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Collector Emitter Voltage VCEO Max | - | - | 1.2 kV |
| Collector Emitter Saturation Voltage | - | - | 2.5 V |
| Continuous Collector Current at 25 C | - | - | 75 A |
| Gate Emitter Leakage Current | - | - | 250 nA |
| Maximum Gate Emitter Voltage | - | - | 30 V |
| Continuous Collector Current Ic Max | - | - | 75 A |