 | |  | |
| PartNumber | APT36GA60B | APT36GA60BD15 | APT36N90BC3G |
| Description | IGBT Transistors FG, IGBT, 600V, TO-247 | IGBT Transistors FG, IGBT-COMBI, 600V, TO-247 | MOSFET Power MOSFET - CoolMOS |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Transistors | IGBT Transistors | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Packaging | Tube | Tube | Tube |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Product Type | IGBT Transistors | IGBT Transistors | MOSFET |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | MOSFETs |
| Mounting Style | - | - | Through Hole |
| Package / Case | - | - | TO-247-3 |
| Transistor Polarity | - | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | - | 900 V |
| Id Continuous Drain Current | - | - | 36 A |
| Rds On Drain Source Resistance | - | - | 100 mOhms |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V |
| Vgs Gate Source Voltage | - | - | 20 V |
| Qg Gate Charge | - | - | 252 nC |
| Minimum Operating Temperature | - | - | - 55 C |
| Maximum Operating Temperature | - | - | + 150 C |
| Pd Power Dissipation | - | - | 390 W |
| Channel Mode | - | - | Enhancement |
| Height | - | - | 5.31 mm |
| Length | - | - | 21.46 mm |
| Width | - | - | 16.26 mm |
| Fall Time | - | - | 25 ns |
| Rise Time | - | - | 20 ns |
| Typical Turn Off Delay Time | - | - | 400 ns |
| Typical Turn On Delay Time | - | - | 70 ns |
| Unit Weight | - | - | 1.340411 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APT36GA60B | IGBT Transistors FG, IGBT, 600V, TO-247 | |
| APT36GA60BD15 | IGBT Transistors FG, IGBT-COMBI, 600V, TO-247 | ||
| APT36N90BC3G | MOSFET Power MOSFET - CoolMOS | ||
| APT36N90BC3G | Darlington Transistors MOSFET | ||
| APT36GA60BD15 | IGBT Transistors | ||
| APT36GA60B | IGBT 600V 65A 290W TO-247 |