 | | | |
| PartNumber | APTGT50A120T1G | APTGT50A170T1G | APTGT50A1202G |
| Description | IGBT Modules CC8022 | IGBT Modules DOR CC8081 | IGBT Modules Power Module - IGBT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Dual | Dual | Dual |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 1.7 kV | 1.2 kV |
| Collector Emitter Saturation Voltage | 1.7 V | 2 V | 1.7 V |
| Continuous Collector Current at 25 C | 75 A | 75 A | 75 A |
| Gate Emitter Leakage Current | 400 nA | 400 nA | 400 nA |
| Pd Power Dissipation | 277 W | 312 W | 277 W |
| Package / Case | SP1-12 | SP1-12 | SP2-18 |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 100 C | + 100 C | + 100 C |
| Packaging | Tube | Tube | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 2.821917 oz | 2.821917 oz | 2.821917 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APTGT50A120T1G | IGBT Modules CC8022 | |
| APTGT50A170T1G | IGBT Modules DOR CC8081 | ||
| APTGT50A170TG | IGBT Modules DOR CC4076 | ||
| APTGT50A1202G | IGBT Modules Power Module - IGBT |