![]() | ![]() | ||
| PartNumber | APTGT50SK170T1G | APTGT50SK170TG | APTGT50SK170D1 |
| Description | IGBT Modules CC8074 | IGBT Modules DOR CC4097 | |
| Manufacturer | Microchip | Microchip | Microsemi Corporation |
| Product Category | IGBT Modules | IGBT Modules | IGBTs - Modules |
| RoHS | Y | Y | - |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 1.7 kV | 1.7 kV | - |
| Collector Emitter Saturation Voltage | 2 V | 2 V | - |
| Continuous Collector Current at 25 C | 75 A | 75 A | - |
| Gate Emitter Leakage Current | 400 nA | 400 nA | - |
| Pd Power Dissipation | 312 W | 312 W | - |
| Package / Case | SP-1 | SP4 | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 150 C | + 100 C | - |
| Packaging | Tube | Tube | - |
| Height | 11.5 mm | - | - |
| Length | 51.6 mm | - | - |
| Operating Temperature Range | - 40 C to + 150 C | - | - |
| Width | 40.8 mm | - | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| Mounting Style | Chassis Mount | Chassis Mount | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 1 | 1 | - |
| Subcategory | IGBTs | IGBTs | - |
| Unit Weight | 2.821917 oz | 3.880136 oz | - |
| Series | - | - | - |
| Package Case | - | - | D1 |
| Mounting Type | - | - | Chassis Mount |
| Supplier Device Package | - | - | D1 |
| Input | - | - | Standard |
| Power Max | - | - | 310W |
| Current Collector Ic Max | - | - | 70A |
| Voltage Collector Emitter Breakdown Max | - | - | 1700V |
| Current Collector Cutoff Max | - | - | 6mA |
| IGBT Type | - | - | Trench Field Stop |
| Vce on Max Vge Ic | - | - | 2.4V @ 15V, 50A |
| Input Capacitance Cies Vce | - | - | 4.4nF @ 25V |
| NTC Thermistor | - | - | No |