 |  | | |
| PartNumber | AUIRF7103QTR | AUIRF7103QTRPBF | AUIRF7103QTR. |
| Description | MOSFET AUTO 50V 1 N-CH HEXFET 130mOhms | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 50 V | - | - |
| Id Continuous Drain Current | 3 A | - | - |
| Rds On Drain Source Resistance | 200 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 10 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 2.4 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | - | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Width | 3.9 mm | - | - |
| Brand | Infineon / IR | - | - |
| Forward Transconductance Min | 3.4 S | - | - |
| Fall Time | 2.3 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 1.7 ns | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 15 ns | - | - |
| Typical Turn On Delay Time | 5.1 ns | - | - |
| Part # Aliases | SP001517980 | - | - |
| Unit Weight | 0.017870 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon / IR |
AUIRF7103QTR | MOSFET AUTO 50V 1 N-CH HEXFET 130mOhms | |
Infineon Technologies |
AUIRF7103QTR | MOSFET 2N-CH 50V 3A 8SOIC | |
| AUIRF7103QTRPBF | New and Original | ||
| AUIRF7103QTR. | New and Original |