AUIRFR5505T

AUIRFR5505TRL vs AUIRFR5505TR vs AUIRFR5505TRPBF

 
PartNumberAUIRFR5505TRLAUIRFR5505TRAUIRFR5505TRPBF
DescriptionMOSFET AUTO -55V 1 P-CH HEXFET 110mOhmsMOSFET AUTO -55V 1 P-CH HEXFET 110mOhms
ManufacturerInfineonInternational Rectifier-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current18 A--
Rds On Drain Source Resistance110 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge32 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation57 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101--
PackagingReelReel-
Height2.3 mm--
Length6.5 mm--
Transistor Type1 P-Channel1 P-Channel-
Width6.22 mm--
BrandInfineon / IR--
Forward Transconductance Min4.2 S--
Fall Time16 ns16 ns-
Product TypeMOSFET--
Rise Time28 ns28 ns-
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns20 ns-
Typical Turn On Delay Time12 ns12 ns-
Part # AliasesSP001519572--
Unit Weight0.139332 oz0.139332 oz-
Package Case-TO-252-3-
Pd Power Dissipation-57 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-- 18 A-
Vds Drain Source Breakdown Voltage-- 55 V-
Vgs th Gate Source Threshold Voltage-- 4 V-
Rds On Drain Source Resistance-110 mOhms-
Qg Gate Charge-32 nC-
Forward Transconductance Min-4.2 S-
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
AUIRFR5505TRL MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms
Infineon Technologies
Infineon Technologies
AUIRFR5505TRR RF Bipolar Transistors MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms
AUIRFR5505TRL MOSFET P-CH 55V 18A DPAK
AUIRFR5505TR MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms
AUIRFR5505TRPBF New and Original
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