AUIRG4BC30US

AUIRG4BC30USTRL vs AUIRG4BC30USTRR vs AUIRG4BC30US

 
PartNumberAUIRG4BC30USTRLAUIRG4BC30USTRRAUIRG4BC30US
DescriptionIGBT Transistors 600V AUTO ULTRAFAST 8-60KHZ DSCRETE IGBTIGBT Transistors 600V AUTO ULTRAFAST 8-60KHZ DSCRETE IGBTInsulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-263AB
ManufacturerInfineon--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseDPAK-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.52 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C23 A--
Pd Power Dissipation100 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
QualificationAEC-Q101--
PackagingReel--
Continuous Collector Current Ic Max23 A--
Height4.83 mm--
Length10.67 mm--
Width9.65 mm--
BrandInfineon Technologies--
Gate Emitter Leakage Current+/- 100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity800--
SubcategoryIGBTs--
Part # AliasesSP001512374--
Unit Weight0.009185 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
AUIRG4BC30USTRL IGBT Transistors 600V AUTO ULTRAFAST 8-60KHZ DSCRETE IGBT
AUIRG4BC30USTRL IGBT Transistors 600V AUTO ULTRAFAST 8-60KHZ DSCRETE IGBT
AUIRG4BC30USTRR IGBT Transistors 600V AUTO ULTRAFAST 8-60KHZ DSCRETE IGBT
AUIRG4BC30US Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-263AB
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