BC56-10

BC56-10PASX vs BC56-10PA115 vs BC56-10PA,115

 
PartNumberBC56-10PASXBC56-10PA115BC56-10PA,115
DescriptionBipolar Transistors - BJT 45V/60V/80V 1A NPN medium power transNow Nexperia BC56-10PA - Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, SiliconBipolar Transistors - BJT 80 V, 1 A NPN medium power transistors
ManufacturerNexperia-NXP Semiconductors
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Single, Pre-Biased
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseDFN-2020D-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max80 V--
Collector Base Voltage VCBO100 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage500 mV--
Maximum DC Collector Current1 A--
Gain Bandwidth Product fT180 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max250 at 150 mA, 2 V--
PackagingReel-Digi-ReelR Alternate Packaging
BrandNexperia--
DC Collector/Base Gain hfe Min63 at 150 mA, 2 V--
Pd Power Dissipation1.65 W--
Product TypeBJTs - Bipolar Transistors--
QualificationAEC-Q101--
Factory Pack Quantity3000--
SubcategoryTransistors--
Series---
Package Case--3-SMD, No Lead
Mounting Type--Surface Mount
Supplier Device Package--DFN2020-3
Power Max--420mW
Transistor Type--NPN
Current Collector Ic Max--1A
Voltage Collector Emitter Breakdown Max--80V
DC Current Gain hFE Min Ic Vce--63 @ 150mA, 2V
Vce Saturation Max Ib Ic--500mV @ 50mA, 500mA
Current Collector Cutoff Max--100nA (ICBO)
Frequency Transition--180MHz
Manufacturer Part # Description RFQ
Nexperia
Nexperia
BC56-10PASX Bipolar Transistors - BJT 45V/60V/80V 1A NPN medium power trans
BC56-10PA,115 Bipolar Transistors - BJT 80 V, 1 A NPN medium power transistors
BC56-10PASX IC TRANS NPN 1A 80V SOT1061
BC56-10PA115 Now Nexperia BC56-10PA - Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
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