| PartNumber | BC817K16E6433HTMA1 | BC817K16E6327HTSA1 | BC817K16WH6327XTSA1 |
| Description | Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR | Bipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.5A | Bipolar Transistors - BJT NPN Silicon AF Transistor |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 | SOT-323-3 |
| Transistor Polarity | NPN | NPN | NPN |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 45 V | 45 V | 45 V |
| Collector Base Voltage VCBO | 50 V | 50 V | 50 V |
| Emitter Base Voltage VEBO | 5 V | 5 V | 5 V |
| Collector Emitter Saturation Voltage | 0.7 V | 0.7 V | 0.7 V |
| Maximum DC Collector Current | 1000 mA | 1000 mA | 1000 mA |
| Gain Bandwidth Product fT | 170 MHz | 170 MHz | 170 MHz |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | BC817 | BC817 | BC817 |
| DC Current Gain hFE Max | 250 | 250 | 250 |
| Height | 1 mm | - | - |
| Length | 2.9 mm | - | - |
| Packaging | Reel | Reel | Reel |
| Width | 1.3 mm | - | - |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Continuous Collector Current | 500 mA | 500 mA | 500 mA |
| DC Collector/Base Gain hfe Min | 100 | 100 | 100 |
| Pd Power Dissipation | 500 mW | 500 mW | 250 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 10000 | 3000 | 3000 |
| Subcategory | Transistors | Transistors | Transistors |
| Part # Aliases | 817K-16 BC BC817K16E6433XT E6433 SP000271829 | 817K-16 BC BC817K16E6327XT E6327 SP000271788 | 817K-16W BC BC817K16WH6327XT H6327 SP000786164 |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.000176 oz |