BC846SH63

BC846SH6327XTSA1 vs BC846SH6327

 
PartNumberBC846SH6327XTSA1BC846SH6327
DescriptionBipolar Transistors - BJT AF TRANSISTORSMALL SIGNAL BIPOLAR TRANSISTOR, 0.1A I(C), 65V V(BR)CEO, 2-ELEMENT, NPN, SILICON
ManufacturerInfineon-
Product CategoryBipolar Transistors - BJT-
RoHSY-
Mounting StyleSMD/SMT-
Package / CaseSOT-363-6-
Transistor PolarityNPN-
ConfigurationDual-
Collector Emitter Voltage VCEO Max45 V-
Collector Base Voltage VCBO50 V-
Emitter Base Voltage VEBO6 V-
Collector Emitter Saturation Voltage200 mV-
Maximum DC Collector Current200 mA-
Gain Bandwidth Product fT250 MHz-
Minimum Operating Temperature- 65 C-
Maximum Operating Temperature+ 150 C-
SeriesBC846-
DC Current Gain hFE Max450-
Height0.9 mm-
Length2 mm-
PackagingReel-
Width1.25 mm-
BrandInfineon Technologies-
Continuous Collector Current100 mA-
DC Collector/Base Gain hfe Min200-
Pd Power Dissipation250 mW-
Product TypeBJTs - Bipolar Transistors-
Factory Pack Quantity3000-
SubcategoryTransistors-
Part # Aliases846S BC BC846SH6327XT H6327 SP000746922-
Unit Weight0.000265 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BC846SH6327XTSA1 Bipolar Transistors - BJT AF TRANSISTOR
BC846SH6327XTSA1 TRANS 2NPN 65V 0.1A SOT363
BC846SH6327 SMALL SIGNAL BIPOLAR TRANSISTOR, 0.1A I(C), 65V V(BR)CEO, 2-ELEMENT, NPN, SILICON
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